MJD243G

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Mfr.Part #
MJD243G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 4A DPAK
Stock
16
In Stock :
16

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Base Part Number :
MJD243
Width :
6.35mm
Surface Mount :
yes
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Time@Peak Reflow Temperature-Max (s) :
40
Radiation Hardening :
No
Lead Free :
Lead Free
Halogen Free :
Halogen Free
Pin Count :
3
Number of Pins :
3
Transistor Application :
AMPLIFIER
Factory Lead Time :
8 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Transition Frequency :
40MHz
Length :
6.35mm
Power Dissipation :
1.4W
Emitter Base Voltage (VEBO) :
7V
Current Rating :
4A
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Polarity/Channel Type :
NPN
Frequency :
40MHz
Collector Emitter Saturation Voltage :
600mV
Height :
6.35mm
Terminal Finish :
Tin (Sn)
Gain Bandwidth Product :
40MHz
REACH SVHC :
No SVHC
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Weight :
4.535924g
Number of Elements :
1
Max Power Dissipation :
1.4W
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Terminations :
2
Transistor Type :
NPN
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
100V
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Breakdown Voltage :
100V
Published :
2007
Max Collector Current :
4A
Collector Base Voltage (VCBO) :
100V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
hFE Min :
40
Element Configuration :
Single
Voltage - Rated DC :
100V
Datasheets
MJD243G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD243G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD243, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, MJD243G pinout, MJD243G datasheet PDF, MJD243G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD243G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD243G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount

MJD243G Overview


In this device, the DC current gain is 40 @ 200mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).40MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

MJD243G Features


the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz


MJD243G Applications


There are a lot of ON Semiconductor
MJD243G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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