MJB44H11T4
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- Mfr.Part #
- MJB44H11T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A D2PAK
- Stock
- 5,276
- In Stock ：
- 5,276
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Collector Current :
- 10A
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- MJB44
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Max Power Dissipation :
- 50W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 1V
- Case Connection :
- COLLECTOR
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Power - Max :
- 50W
- Transistor Type :
- NPN
- Terminal Position :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- MJB44H11T4
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Cut Tape (CT) Surface Mount
MJB44H11T4-A Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 10A volts.
MJB44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
MJB44H11T4-A Applications
There are a lot of STMicroelectronics
MJB44H11T4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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