MJB44H11T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MJB44H11

Number of Pins :

3

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Collector Current :

10A

ECCN Code :

EAR99

Contact Plating :

Tin

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Max Power Dissipation :

50W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

50MHz

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Power Dissipation :

2W

Collector Emitter Saturation Voltage :

1V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Current Rating :

10A

Number of Elements :

1

Collector Base Voltage (VCBO) :

5V

Pin Count :

3

hFE Min :

60

JESD-609 Code :

e3

Published :

2005

Transistor Element Material :

SILICON

Frequency :

50MHz

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

80V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Voltage - Rated DC :

80V

Gain Bandwidth Product :

50MHz

Max Breakdown Voltage :

80V

Transistor Type :

NPN

Length :

10.29mm

Current - Collector Cutoff (Max) :

10μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Mounting Type :

Surface Mount

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Height :

4.83mm

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

80V

Terminal Form :

Gull wing