MJB41CG
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- Mfr.Part #
- MJB41CG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A D2PAK
- Stock
- 42,834
- In Stock ：
- 42,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 700µA
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- 100V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.5V
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- hFE Min :
- 30
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Height :
- 4.83mm
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 2W
- Length :
- 10.29mm
- Max Power Dissipation :
- 65W
- Width :
- 9.65mm
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Published :
- 2005
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 6A
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Max Collector Current :
- 6A
- Base Part Number :
- MJB41
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Datasheets
- MJB41CG
NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB41CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJB41CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CG Applications
There are a lot of ON Semiconductor
MJB41CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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