MJB45H11G

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Mfr.Part #
MJB45H11G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS PNP 80V 10A D2PAK
Stock
1,062
In Stock :
1,062

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
hFE Min :
60
Collector Emitter Saturation Voltage :
1V
JESD-609 Code :
e3
Pbfree Code :
yes
Lead Free :
Lead Free
Transistor Type :
PNP
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
10μA
Number of Pins :
3
Number of Terminations :
2
REACH SVHC :
No SVHC
Max Collector Current :
10A
Gain Bandwidth Product :
40MHz
Element Configuration :
Single
Voltage - Rated DC :
-80V
Number of Elements :
1
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
2 Weeks
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Surface Mount :
yes
Transition Frequency :
40MHz
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Radiation Hardening :
No
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Published :
2005
Current Rating :
-10A
Pin Count :
3
Power Dissipation :
2W
Max Power Dissipation :
50W
Collector Base Voltage (VCBO) :
5V
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Frequency :
40MHz
Base Part Number :
MJB45H11
Case Connection :
COLLECTOR
Datasheets
MJB45H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJB45H11G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Base Part Number:MJB45H11, MJB45H11G pinout, MJB45H11G datasheet PDF, MJB45H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJB45H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJB45H11G


PNP -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

MJB45H11G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

MJB45H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz


MJB45H11G Applications


There are a lot of ON Semiconductor
MJB45H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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