MJB44H11G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Element Configuration :

Single

Packaging :

Tube

Power Dissipation :

2W

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Radiation Hardening :

No

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Max Power Dissipation :

50W

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Surface Mount :

yes

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Published :

2005

Voltage - Rated DC :

80V

Number of Pins :

3

Mounting Type :

Surface Mount

Number of Terminations :

2

Frequency :

50MHz

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

5V

Collector Emitter Breakdown Voltage :

80V

Transition Frequency :

50MHz

Max Collector Current :

10A

Base Part Number :

MJB44H11

Current - Collector Cutoff (Max) :

10μA

Transistor Type :

NPN

REACH SVHC :

No SVHC

Factory Lead Time :

2 Weeks

Current Rating :

10A

Collector Emitter Saturation Voltage :

1V

Gain Bandwidth Product :

50MHz

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

hFE Min :

60

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ