MJB44H11G

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Mfr.Part #
MJB44H11G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN 80V 10A D2PAK
Stock
25,048
In Stock :
25,048

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Collector Emitter Breakdown Voltage :
80V
Factory Lead Time :
2 Weeks
JESD-609 Code :
e3
Voltage - Rated DC :
80V
Polarity/Channel Type :
NPN
Power Dissipation :
2W
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Case Connection :
COLLECTOR
Time@Peak Reflow Temperature-Max (s) :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Emitter Saturation Voltage :
1V
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Frequency :
50MHz
REACH SVHC :
No SVHC
Transistor Type :
NPN
Element Configuration :
Single
Base Part Number :
MJB44H11
Gain Bandwidth Product :
50MHz
Collector Base Voltage (VCBO) :
5V
Max Collector Current :
10A
Current - Collector Cutoff (Max) :
10μA
hFE Min :
60
Number of Elements :
1
Terminal Form :
Gull wing
Published :
2005
Surface Mount :
yes
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transition Frequency :
50MHz
Collector Emitter Voltage (VCEO) :
80V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Current Rating :
10A
ECCN Code :
EAR99
Pin Count :
3
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Max Power Dissipation :
50W
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Peak Reflow Temperature (Cel) :
260
Datasheets
MJB44H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJB44H11G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Base Part Number:MJB44H11, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, MJB44H11G pinout, MJB44H11G datasheet PDF, MJB44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJB44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJB44H11G


NPN -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

MJB44H11G Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 10A volts.

MJB44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


MJB44H11G Applications


There are a lot of ON Semiconductor
MJB44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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