MJB45H11T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

2W

Case Connection :

COLLECTOR

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Mounting Type :

Surface Mount

Frequency :

40MHz

Voltage - Rated DC :

-80V

Transistor Element Material :

SILICON

Base Part Number :

MJB45H11

RoHS Status :

ROHS3 Compliant

hFE Min :

60

ECCN Code :

EAR99

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Collector Base Voltage (VCBO) :

5V

Transition Frequency :

40MHz

Collector Emitter Saturation Voltage :

1V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Radiation Hardening :

No

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Max Power Dissipation :

50W

Number of Terminations :

2

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

80V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gain Bandwidth Product :

40MHz

Pin Count :

3

REACH SVHC :

No SVHC

Current Rating :

-10A

Polarity/Channel Type :

PNP

Terminal Finish :

Tin (Sn)

Factory Lead Time :

7 Weeks

Max Breakdown Voltage :

80V

Current - Collector Cutoff (Max) :

10μA

Max Collector Current :

10A