MJB42CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Collector Base Voltage (VCBO) :

100V

Max Power Dissipation :

65W

Number of Terminations :

2

Collector Emitter Saturation Voltage :

1.5V

Base Part Number :

MJB42

Max Collector Current :

6A

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

Current Rating :

-6A

Peak Reflow Temperature (Cel) :

260

Width :

11.05mm

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Published :

2005

Pbfree Code :

yes

Power Dissipation :

2W

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current - Collector Cutoff (Max) :

700µA

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Gain Bandwidth Product :

3MHz

Collector Emitter Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

30

JESD-609 Code :

e3

Radiation Hardening :

No

Transition Frequency :

3MHz

Case Connection :

COLLECTOR

Polarity :

PNP, NPN

Height :

4.83mm

Lead Free :

Lead Free

Max Breakdown Voltage :

100V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Voltage - Rated DC :

-100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Number of Pins :

3

Frequency :

3MHz

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Transistor Type :

PNP

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Length :

10.29mm

Collector Emitter Voltage (VCEO) :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99