MJB42CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

-100V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Elements :

1

Max Power Dissipation :

65W

Base Part Number :

MJB42

Element Configuration :

Single

Frequency :

3MHz

Factory Lead Time :

6 Weeks

Max Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

700µA

Power Dissipation :

2W

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

hFE Min :

30

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Terminal Form :

Gull wing

Height :

4.83mm

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transistor Type :

PNP

Current Rating :

-6A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

100V

Published :

2005

Polarity :

PNP, NPN

Gain Bandwidth Product :

3MHz

Pin Count :

3

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Transition Frequency :

3MHz

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

100V

Collector Emitter Saturation Voltage :

1.5V

Number of Pins :

3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Width :

11.05mm

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Max Collector Current :

6A

Length :

10.29mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

100V