MJB41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Published :

2005

Current Rating :

6A

Max Power Dissipation :

65W

Radiation Hardening :

No

hFE Min :

30

Number of Pins :

3

Contact Plating :

Tin

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Transistor Type :

NPN

Pbfree Code :

yes

Mounting Type :

Surface Mount

Surface Mount :

yes

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Length :

10.29mm

Transition Frequency :

3MHz

Power Dissipation :

2W

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

100V

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

4.83mm

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Cutoff (Max) :

700µA

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

100V

Base Part Number :

MJB41

Transistor Application :

SWITCHING

Max Collector Current :

6A

Number of Terminations :

2

Collector Emitter Saturation Voltage :

1.5V

ECCN Code :

EAR99

Pin Count :

3

Element Configuration :

Single

Terminal Form :

Gull wing

Polarity :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Collector Emitter Voltage (VCEO) :

100V

Width :

9.65mm

Voltage - Rated DC :

100V

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Gain Bandwidth Product :

3MHz

Frequency :

3MHz

Number of Elements :

1