MJB44H11
- Mfr.Part #
- MJB44H11
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A D2PAK
- Stock
- 9,624
- In Stock :
- 9,624
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- HTS Code :
- 8541.29.00.75
- hFE Min :
- 60
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- 240
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- MJB44H11
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Collector Cutoff (Max) :
- 10μA
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 1V
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 10A
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Current Rating :
- 10A
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 2
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Datasheets
- MJB44H11
MJB44H11 Documents

NPN -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB44H11 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 50MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
MJB44H11 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJB44H11 Applications
There are a lot of ON Semiconductor
MJB44H11 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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