MJB44H11

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Mfr.Part #
MJB44H11
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN 80V 10A D2PAK
Stock
9,624
In Stock :
9,624

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
not_compliant
HTS Code :
8541.29.00.75
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Number of Terminations :
2
Max Collector Current :
10A
Surface Mount :
yes
Terminal Finish :
Tin/Lead (Sn80Pb20)
Transition Frequency :
50MHz
Transistor Application :
SWITCHING
Packaging :
Tube
Collector Emitter Saturation Voltage :
1V
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
5V
Collector Emitter Voltage (VCEO) :
1V
RoHS Status :
Non-RoHS Compliant
Pin Count :
3
Qualification Status :
Not Qualified
hFE Min :
60
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
80V
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Published :
2009
Base Part Number :
MJB44H11
Lead Free :
Contains Lead
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
80V
Number of Elements :
1
Current Rating :
10A
JESD-609 Code :
e0
JESD-30 Code :
R-PSSO-G2
Current - Collector Cutoff (Max) :
10μA
Time@Peak Reflow Temperature-Max (s) :
30
Mounting Type :
Surface Mount
Element Configuration :
Single
ECCN Code :
EAR99
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Peak Reflow Temperature (Cel) :
240
Number of Pins :
3
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Gain Bandwidth Product :
50MHz
Max Power Dissipation :
2W
Introducing Transistors - Bipolar (BJT) - Single onsemi MJB44H11 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Base Part Number:MJB44H11, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, MJB44H11 pinout, MJB44H11 datasheet PDF, MJB44H11 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJB44H11 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJB44H11


NPN -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

MJB44H11 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 50MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

MJB44H11 Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


MJB44H11 Applications


There are a lot of ON Semiconductor
MJB44H11 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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