MJB41C
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- Mfr.Part #
- MJB41C
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A D2PAK
- Stock
- 41,529
- In Stock ：
- 41,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Published :
- 2005
- JESD-30 Code :
- R-PSSO-G2
- Voltage - Rated DC :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Height :
- 4.83mm
- Current - Collector Cutoff (Max) :
- 700µA
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 6A
- Frequency :
- 3MHz
- Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 30
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Max Power Dissipation :
- 65W
- Element Configuration :
- Single
- Max Collector Current :
- 6A
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Length :
- 10.29mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Packaging :
- Tube
- Base Part Number :
- MJB41
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Width :
- 9.65mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Datasheets
- MJB41C
NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB41CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJB41CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CG Applications
There are a lot of ON Semiconductor
MJB41CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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