MJB41C
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- Mfr.Part #
- MJB41C
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A D2PAK
- Stock
- 41,529
- In Stock ：
- 41,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.29mm
- Current Rating :
- 6A
- Packaging :
- Tube
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 700µA
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- 1.5V
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 65W
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transition Frequency :
- 3MHz
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Width :
- 9.65mm
- ECCN Code :
- EAR99
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 6A
- hFE Min :
- 30
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Height :
- 4.83mm
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 3MHz
- Polarity/Channel Type :
- NPN
- Base Part Number :
- MJB41
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Datasheets
- MJB41C
NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB41CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJB41CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CG Applications
There are a lot of ON Semiconductor
MJB41CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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