MJB41CT4

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Mfr.Part #
MJB41CT4
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN 100V 6A D2PAK
Stock
24,283
In Stock :
24,283

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
700µA
Voltage - Rated DC :
100V
Current Rating :
6A
Length :
10.29mm
Frequency :
3MHz
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Max Power Dissipation :
65W
Base Part Number :
MJB41
Max Collector Current :
6A
Width :
9.65mm
Transistor Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
100V
Transition Frequency :
3MHz
Collector Emitter Voltage (VCEO) :
100V
Number of Pins :
3
Power Dissipation :
2W
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-65°C~150°C TJ
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Published :
2005
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
1.5V
Terminal Form :
Gull wing
hFE Min :
30
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 3A 4V
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 600mA, 6A
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Pin Count :
3
Number of Terminations :
2
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
Height :
4.83mm
Radiation Hardening :
No
Max Breakdown Voltage :
100V
Element Configuration :
Single
JESD-30 Code :
R-PSSO-G2
Polarity :
NPN, PNP
Gain Bandwidth Product :
3MHz
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
100V
Surface Mount :
yes
Datasheets
MJB41CT4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJB41CT4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:MJB41, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, MJB41CT4 pinout, MJB41CT4 datasheet PDF, MJB41CT4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJB41CT4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJB41CT4


NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount

MJB41CT4G Overview


In this device, the DC current gain is 15 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (6A).3MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.

MJB41CT4G Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz


MJB41CT4G Applications


There are a lot of ON Semiconductor
MJB41CT4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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