IXTV36N50PS

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Mfr.Part #
IXTV36N50PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 500V 36A PLUS-220SMD
Stock
46,248
In Stock :
46,248

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
36A
Vgs (Max) :
±30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Package :
Tube
Pulsed Drain Current-Max (IDM) :
108A
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Lead Free :
Lead Free
Voltage - Rated DC :
500V
Vgs(th) (Max) @ Id :
5V @ 250μA
Power Dissipation (Max) :
540W (Tc)
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Element Configuration :
Single
Rise Time :
27ns
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Published :
2006
Current Rating :
36A
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Turn-Off Delay Time :
75 ns
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Product Status :
Obsolete
Qualification Status :
Not Qualified
Package / Case :
PLUS-220SMD
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Number of Pins :
3
Drain-source On Resistance-Max :
0.17Ohm
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
500 V
Pin Count :
3
Fall Time (Typ) :
21 ns
Pbfree Code :
yes
Power Dissipation-Max :
540W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Number of Terminations :
2
Number of Terminals :
2
Surface Mount :
yes
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Supplier Device Package :
PLUS-220SMD
Avalanche Energy Rating (Eas) :
1500 mJ
Gate to Source Voltage (Vgs) :
30V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
500V
Number of Elements :
1
RoHS Status :
RoHS Compliant
Drain to Source Breakdown Voltage :
500V
Manufacturer :
IXYS Corporation
Series :
PolarHV™
Mount :
Surface Mount
Power Dissipation :
540W
Datasheets
IXTV36N50PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV36N50PS from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:PLUS-220SMD, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, IXTV36N50PS pinout, IXTV36N50PS datasheet PDF, IXTV36N50PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV36N50PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V PLUS-220SMD

IXTV36N50PS Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 5500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 108A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTV36N50PS Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 500V drain to source voltage (Vdss)


IXTV36N50PS Applications


There are a lot of IXYS
IXTV36N50PS applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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