IXTV22N50PS
- Mfr.Part #
- IXTV22N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A PLUS-220SMD
- Stock
- 38,021
- In Stock :
- 38,021
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain to Source Breakdown Voltage :
- 500V
- Voltage - Rated DC :
- 500V
- Qualification Status :
- Not Qualified
- Product Status :
- Obsolete
- Pulsed Drain Current-Max (IDM) :
- 50A
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Manufacturer :
- IXYS Corporation
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.27Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 22A
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2006
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Terminal Form :
- Gull wing
- Power Dissipation :
- 350W
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Number of Elements :
- 1
- FET Feature :
- --
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 350W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Current Rating :
- 22A
- Turn-Off Delay Time :
- 75 ns
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 350 W
- JESD-30 Code :
- R-PSSO-G2
- Drain Current-Max (Abs) (ID) :
- 22 A
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Rise Time :
- 27ns
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 350W Tc
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Series :
- PolarHV™
- Vgs (Max) :
- ±30V
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 500 V
- Terminal Position :
- Single
- Package / Case :
- PLUS-220SMD
- Fall Time (Typ) :
- 21 ns
- Supplier Device Package :
- PLUS-220SMD
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- Datasheets
- IXTV22N50PS
N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD
IXTV22N50PS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTV22N50PS Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTV22N50PS Applications
There are a lot of IXYS
IXTV22N50PS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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