IXTV22N50PS

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Mfr.Part #
IXTV22N50PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 500V 22A PLUS-220SMD
Stock
38,021
In Stock :
38,021

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
27ns
Turn-Off Delay Time :
75 ns
Packaging :
Tube
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Mount :
Surface Mount
Voltage - Rated DC :
500V
Product Status :
Obsolete
Fall Time (Typ) :
21 ns
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
750 mJ
Case Connection :
DRAIN
Supplier Device Package :
PLUS-220SMD
Polarity/Channel Type :
N-Channel
Current Rating :
22A
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Pin Count :
3
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
22 A
Rds On (Max) @ Id, Vgs :
270m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
2630pF @ 25V
Series :
PolarHV™
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Power Dissipation :
350W
Drain to Source Voltage (Vdss) :
500V
Pulsed Drain Current-Max (IDM) :
50A
DS Breakdown Voltage-Min :
500 V
Power Dissipation-Max :
350W Tc
Power Dissipation (Max) :
350W (Tc)
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Published :
2006
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
350 W
Element Configuration :
Single
Package / Case :
PLUS-220SMD
Number of Terminals :
2
Manufacturer :
IXYS Corporation
RoHS Status :
RoHS Compliant
Drain to Source Breakdown Voltage :
500V
Number of Elements :
1
Mounting Type :
Surface Mount
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.27Ohm
Continuous Drain Current (ID) :
22A
Surface Mount :
yes
FET Feature :
--
Datasheets
IXTV22N50PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N50PS from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:PLUS-220SMD, Mounting Type:Surface Mount, IXTV22N50PS pinout, IXTV22N50PS datasheet PDF, IXTV22N50PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N50PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD

IXTV22N50PS Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTV22N50PS Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTV22N50PS Applications


There are a lot of IXYS
IXTV22N50PS applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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