IXTV22N50PS

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Mfr.Part #
IXTV22N50PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 500V 22A PLUS-220SMD
Stock
38,021
In Stock :
38,021

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
750 mJ
FET Feature :
--
Series :
PolarHV™
Current Rating :
22A
Package :
Tube
Voltage - Rated DC :
500V
Power Dissipation :
350W
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Number of Pins :
3
Mount :
Surface Mount
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
500 V
Product Status :
Obsolete
Number of Terminals :
2
Power Dissipation (Max) :
350W (Tc)
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Package / Case :
PLUS-220SMD
Drain to Source Breakdown Voltage :
500V
Rise Time :
27ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
75 ns
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Mounting Type :
Surface Mount
Pin Count :
3
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
22A
Surface Mount :
yes
Element Configuration :
Single
Power Dissipation-Max (Abs) :
350 W
Fall Time (Typ) :
21 ns
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
22 A
Drain-source On Resistance-Max :
0.27Ohm
Power Dissipation-Max :
350W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2630pF @ 25V
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Number of Terminations :
2
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
270m Ω @ 11A, 10V
Number of Elements :
1
Published :
2006
JESD-30 Code :
R-PSSO-G2
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
50A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
500V
Supplier Device Package :
PLUS-220SMD
Terminal Position :
Single
Datasheets
IXTV22N50PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N50PS from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:PLUS-220SMD, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTV22N50PS pinout, IXTV22N50PS datasheet PDF, IXTV22N50PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N50PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD

IXTV22N50PS Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTV22N50PS Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTV22N50PS Applications


There are a lot of IXYS
IXTV22N50PS applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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