IXTV22N50PS
- Mfr.Part #
- IXTV22N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A PLUS-220SMD
- Stock
- 38,021
- In Stock :
- 38,021
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 750 mJ
- FET Feature :
- --
- Series :
- PolarHV™
- Current Rating :
- 22A
- Package :
- Tube
- Voltage - Rated DC :
- 500V
- Power Dissipation :
- 350W
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 500 V
- Product Status :
- Obsolete
- Number of Terminals :
- 2
- Power Dissipation (Max) :
- 350W (Tc)
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Package / Case :
- PLUS-220SMD
- Drain to Source Breakdown Voltage :
- 500V
- Rise Time :
- 27ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 75 ns
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 22A
- Surface Mount :
- yes
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 350 W
- Fall Time (Typ) :
- 21 ns
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 22 A
- Drain-source On Resistance-Max :
- 0.27Ohm
- Power Dissipation-Max :
- 350W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Number of Elements :
- 1
- Published :
- 2006
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 50A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- PLUS-220SMD
- Terminal Position :
- Single
- Datasheets
- IXTV22N50PS
N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD
IXTV22N50PS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTV22N50PS Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTV22N50PS Applications
There are a lot of IXYS
IXTV22N50PS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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