IXTV22N50PS
- Mfr.Part #
- IXTV22N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A PLUS-220SMD
- Stock
- 38,021
- In Stock :
- 38,021
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 27ns
- Turn-Off Delay Time :
- 75 ns
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 500V
- Product Status :
- Obsolete
- Fall Time (Typ) :
- 21 ns
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Case Connection :
- DRAIN
- Supplier Device Package :
- PLUS-220SMD
- Polarity/Channel Type :
- N-Channel
- Current Rating :
- 22A
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 22 A
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Series :
- PolarHV™
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 350W
- Drain to Source Voltage (Vdss) :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 50A
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation-Max :
- 350W Tc
- Power Dissipation (Max) :
- 350W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 350 W
- Element Configuration :
- Single
- Package / Case :
- PLUS-220SMD
- Number of Terminals :
- 2
- Manufacturer :
- IXYS Corporation
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.27Ohm
- Continuous Drain Current (ID) :
- 22A
- Surface Mount :
- yes
- FET Feature :
- --
- Datasheets
- IXTV22N50PS
N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD
IXTV22N50PS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTV22N50PS Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTV22N50PS Applications
There are a lot of IXYS
IXTV22N50PS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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