IXTV102N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Package :

Tube

Manufacturer :

IXYS Corporation

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

1200 mJ

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

23m Ω @ 500mA, 10V

Number of Terminations :

3

DS Breakdown Voltage-Min :

200 V

Terminal Form :

THROUGH-HOLE

Series :

TrenchHV™

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

250A

Pin Count :

3

Published :

2007

Turn-Off Delay Time :

50 ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

FET Feature :

--

Product Status :

Obsolete

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

PLUS220

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

750W Tc

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

200V

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

26ns

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Case Connection :

DRAIN

Power Dissipation :

750W

Package / Case :

TO-220-3, Short Tab

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

102A

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Power Dissipation (Max) :

750W (Tc)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Mount :

Through Hole

Number of Elements :

1

Number of Pins :

3

FET Type :

N-Channel

Fall Time (Typ) :

25 ns

Drain-source On Resistance-Max :

0.023 Ω

Transistor Element Material :

SILICON

Pbfree Code :

yes