IXTV102N20T

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Mfr.Part #
IXTV102N20T
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 200V 102A PLUS220
Stock
34,079
In Stock :
34,079

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Pin Count :
3
Power Dissipation-Max :
750W Tc
JESD-30 Code :
R-PSIP-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Continuous Drain Current (ID) :
102A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
25 ns
Mount :
Through Hole
Vgs (Max) :
±30V
Published :
2007
Surface Mount :
No
Packaging :
Tube
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
250A
Manufacturer :
IXYS Corporation
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
PLUS220
Case Connection :
DRAIN
FET Type :
N-Channel
Mounting Type :
Through Hole
Rise Time :
26ns
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Drain-source On Resistance-Max :
0.023 Ω
Drain to Source Breakdown Voltage :
200V
JESD-609 Code :
e1
Power Dissipation :
750W
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
Series :
TrenchHV™
Number of Pins :
3
DS Breakdown Voltage-Min :
200 V
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
30V
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
50 ns
FET Feature :
--
Transistor Element Material :
SILICON
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Package / Case :
TO-220-3, Short Tab
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
1200 mJ
Product Status :
Obsolete
Drain to Source Voltage (Vdss) :
200V
Power Dissipation (Max) :
750W (Tc)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV102N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Short Tab, Operating Temperature:-55°C~175°C TJ, IXTV102N20T pinout, IXTV102N20T datasheet PDF, IXTV102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV102N20T


N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-220-3, Short Tab

IXTV102N20T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 102A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTV102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTV102N20T Applications


There are a lot of IXYS
IXTV102N20T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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