IXTV102N20T

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Mfr.Part #
IXTV102N20T
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 200V 102A PLUS220
Stock
34,079
In Stock :
34,079

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
200 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
25 ns
Supplier Device Package :
PLUS220
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mount :
Through Hole
Qualification Status :
Not Qualified
Number of Elements :
1
Terminal Position :
Single
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
200V
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Rise Time :
26ns
Vgs (Max) :
±30V
Case Connection :
DRAIN
Pin Count :
3
Avalanche Energy Rating (Eas) :
1200 mJ
Power Dissipation :
750W
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
200V
Number of Pins :
3
Number of Terminals :
3
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
ECCN Code :
EAR99
Packaging :
Tube
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Package / Case :
TO-220-3, Short Tab
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Series :
TrenchHV™
Drain-source On Resistance-Max :
0.023 Ω
Power Dissipation-Max :
750W Tc
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Manufacturer :
IXYS Corporation
Vgs(th) (Max) @ Id :
4.5V @ 1mA
RoHS Status :
RoHS Compliant
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~175°C TJ
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
250A
JESD-30 Code :
R-PSIP-T3
Pbfree Code :
yes
FET Feature :
--
Power Dissipation (Max) :
750W (Tc)
Turn-Off Delay Time :
50 ns
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
102A
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Additional Feature :
AVALANCHE RATED
Published :
2007
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV102N20T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Short Tab, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, IXTV102N20T pinout, IXTV102N20T datasheet PDF, IXTV102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV102N20T


N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-220-3, Short Tab

IXTV102N20T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 102A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTV102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTV102N20T Applications


There are a lot of IXYS
IXTV102N20T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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