IXTV102N20T
- Mfr.Part #
- IXTV102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A PLUS220
- Stock
- 34,079
- In Stock :
- 34,079
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 250A
- JESD-30 Code :
- R-PSIP-T3
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- TrenchHV™
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 25 ns
- Supplier Device Package :
- PLUS220
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Pin Count :
- 3
- Package / Case :
- TO-220-3, Short Tab
- Package :
- Tube
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- Drain-source On Resistance-Max :
- 0.023 Ω
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Product Status :
- Obsolete
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Rise Time :
- 26ns
- Drain to Source Voltage (Vdss) :
- 200V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Breakdown Voltage :
- 200V
- Published :
- 2007
- DS Breakdown Voltage-Min :
- 200 V
- Power Dissipation :
- 750W
- Manufacturer :
- IXYS Corporation
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Surface Mount :
- No
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 750W (Tc)
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 50 ns
- Continuous Drain Current (ID) :
- 102A
- Power Dissipation-Max :
- 750W Tc
- RoHS Status :
- RoHS Compliant
- Number of Terminals :
- 3
- Datasheets
- IXTV102N20T
N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-220-3, Short Tab
IXTV102N20T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 102A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTV102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTV102N20T Applications
There are a lot of IXYS
IXTV102N20T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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