IXTV102N20T
- Mfr.Part #
- IXTV102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A PLUS220
- Stock
- 34,079
- In Stock :
- 34,079
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 200 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 25 ns
- Supplier Device Package :
- PLUS220
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Terminal Position :
- Single
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 26ns
- Vgs (Max) :
- ±30V
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Power Dissipation :
- 750W
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 200V
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Package / Case :
- TO-220-3, Short Tab
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- TrenchHV™
- Drain-source On Resistance-Max :
- 0.023 Ω
- Power Dissipation-Max :
- 750W Tc
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 250A
- JESD-30 Code :
- R-PSIP-T3
- Pbfree Code :
- yes
- FET Feature :
- --
- Power Dissipation (Max) :
- 750W (Tc)
- Turn-Off Delay Time :
- 50 ns
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 102A
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2007
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Datasheets
- IXTV102N20T
IXTV102N20T Documents
N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-220-3, Short Tab
IXTV102N20T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 102A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 200 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTV102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTV102N20T Applications
There are a lot of IXYS
IXTV102N20T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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