IXTV22N60PS

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Mfr.Part #
IXTV22N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 22A PLUS-220SMD
Stock
27,393
In Stock :
27,393

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
400W Tc
Product Status :
Obsolete
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Reach Compliance Code :
Compliant
Package / Case :
PLUS-220SMD
Terminal Position :
Single
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Power Dissipation :
400W
Rise Time :
20ns
Lead Free :
Lead Free
Terminal Form :
Gull wing
Turn-Off Delay Time :
60 ns
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
Mount :
Surface Mount
Voltage - Rated DC :
600V
Current Rating :
22A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
2
Pin Count :
3
Series :
PolarHV™
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
400W (Tc)
Number of Elements :
1
Package :
Tube
Transistor Application :
SWITCHING
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
66A
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
600 V
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Drain to Source Breakdown Voltage :
600V
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
1000 mJ
Drain-source On Resistance-Max :
0.35 Ω
Fall Time (Typ) :
23 ns
Gate to Source Voltage (Vgs) :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Supplier Device Package :
PLUS-220SMD
Drain to Source Voltage (Vdss) :
600V
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Number of Terminations :
2
Published :
2006
Continuous Drain Current (ID) :
22A
Polarity/Channel Type :
N-Channel
Datasheets
IXTV22N60PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60PS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, IXTV22N60PS pinout, IXTV22N60PS datasheet PDF, IXTV22N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V PLUS-220SMD

IXTV22N60PS Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 66A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTV22N60PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXTV22N60PS Applications


There are a lot of IXYS
IXTV22N60PS applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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