IXTV22N60PS
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- Mfr.Part #
- IXTV22N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS-220SMD
- Stock
- 27,393
- In Stock ：
- 27,393
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 400W Tc
- Power Dissipation (Max) :
- 400W (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Terminals :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 22A
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 60 ns
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- PolarHV™
- Pulsed Drain Current-Max (IDM) :
- 66A
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 600 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Manufacturer :
- IXYS Corporation
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 600V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Fall Time (Typ) :
- 23 ns
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 400W
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 30V
- Current Rating :
- 22A
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- PLUS-220SMD
- Product Status :
- Obsolete
- Rise Time :
- 20ns
- Package / Case :
- PLUS-220SMD
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.35 Ω
- Published :
- 2006
- Package :
- Tube
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Datasheets
- IXTV22N60PS
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V PLUS-220SMD
IXTV22N60PS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 66A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTV22N60PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXTV22N60PS Applications
There are a lot of IXYS
IXTV22N60PS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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