IXTV22N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.27Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

50A

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Manufacturer :

IXYS Corporation

Terminal Position :

Single

FET Type :

N-Channel

Turn-Off Delay Time :

75 ns

Number of Elements :

1

DS Breakdown Voltage-Min :

500 V

Product Status :

Obsolete

Number of Terminals :

3

Package / Case :

TO-220-3, Short Tab

Avalanche Energy Rating (Eas) :

750 mJ

Number of Pins :

3

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Continuous Drain Current (ID) :

22A

Pin Count :

3

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain Current-Max (Abs) (ID) :

22 A

Power Dissipation (Max) :

350W (Tc)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rds On (Max) @ Id, Vgs :

270m Ω @ 11A, 10V

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

500V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Series :

PolarHV™

Supplier Device Package :

PLUS220

Power Dissipation-Max (Abs) :

350 W

Drain to Source Breakdown Voltage :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

21 ns

Rise Time :

27ns

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Current Rating :

22A

Power Dissipation-Max :

350W Tc

Voltage - Rated DC :

500V

Power Dissipation :

350W

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Vgs (Max) :

±30V

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Packaging :

Tube