IXTV22N60P

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Mfr.Part #
IXTV22N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 600V 22A PLUS220
Stock
11,451
In Stock :
11,451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Continuous Drain Current (ID) :
22A
DS Breakdown Voltage-Min :
600 V
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Number of Terminations :
3
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
600V
Power Dissipation-Max :
400W Tc
Case Connection :
DRAIN
JESD-30 Code :
R-PSIP-T3
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
66A
Additional Feature :
AVALANCHE RATED
Rise Time :
20ns
Transistor Element Material :
SILICON
Package / Case :
TO-220-3, Short Tab
Surface Mount :
No
Turn-Off Delay Time :
60 ns
Product Status :
Obsolete
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position :
Single
Power Dissipation (Max) :
400W (Tc)
FET Feature :
-
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
600V
Polarity/Channel Type :
N-Channel
Number of Terminals :
3
Number of Elements :
1
Voltage - Rated DC :
600V
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Supplier Device Package :
PLUS220
Drain-source On Resistance-Max :
0.35 Ω
Packaging :
Tube
Number of Pins :
3
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Published :
2006
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
1000 mJ
FET Type :
N-Channel
Package :
Tube
Qualification Status :
Not Qualified
Fall Time (Typ) :
23 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
PolarHV™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Current Rating :
22A
Power Dissipation :
400W
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Short Tab, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTV22N60P pinout, IXTV22N60P datasheet PDF, IXTV22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-220-3, Short Tab

IXTV22N60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTV22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXTV22N60P Applications


There are a lot of IXYS
IXTV22N60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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