IXTV22N60P

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Mfr.Part #
IXTV22N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 600V 22A PLUS220
Stock
11,451
In Stock :
11,451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.35 Ω
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Number of Terminations :
3
Fall Time (Typ) :
23 ns
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Package / Case :
TO-220-3, Short Tab
Continuous Drain Current (ID) :
22A
Package :
Tube
FET Type :
N-Channel
Power Dissipation-Max :
400W Tc
Mount :
Through Hole
Product Status :
Obsolete
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
600V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Supplier Device Package :
PLUS220
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Current Rating :
22A
Power Dissipation (Max) :
400W (Tc)
Additional Feature :
AVALANCHE RATED
Rise Time :
20ns
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Surface Mount :
No
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
30V
Series :
PolarHV™
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
DS Breakdown Voltage-Min :
600 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Drain to Source Breakdown Voltage :
600V
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
JESD-30 Code :
R-PSIP-T3
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
66A
JESD-609 Code :
e1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Published :
2006
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
400W
Turn-Off Delay Time :
60 ns
Number of Terminals :
3
Voltage - Rated DC :
600V
FET Feature :
-
Pin Count :
3
Manufacturer :
IXYS Corporation
Avalanche Energy Rating (Eas) :
1000 mJ
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Short Tab, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXTV22N60P pinout, IXTV22N60P datasheet PDF, IXTV22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-220-3, Short Tab

IXTV22N60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTV22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXTV22N60P Applications


There are a lot of IXYS
IXTV22N60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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