IXTV22N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Supplier Device Package :

PLUS220

Pulsed Drain Current-Max (IDM) :

66A

Transistor Element Material :

SILICON

Pin Count :

3

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Polarity/Channel Type :

N-Channel

Rise Time :

20ns

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

350m Ω @ 11A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

400W

Package / Case :

TO-220-3, Short Tab

Published :

2006

Number of Elements :

1

Mounting Type :

Through Hole

Current Rating :

22A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Power Dissipation (Max) :

400W (Tc)

Continuous Drain Current (ID) :

22A

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Series :

PolarHV™

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Product Status :

Obsolete

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.35 Ω

Avalanche Energy Rating (Eas) :

1000 mJ

Package Shape :

RECTANGULAR

Voltage - Rated DC :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Turn-Off Delay Time :

60 ns

Drain to Source Voltage (Vdss) :

600V

Element Configuration :

Single

Vgs (Max) :

±30V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

23 ns

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600 V

FET Feature :

-

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

400W Tc

JESD-609 Code :

e1

FET Type :

N-Channel

Manufacturer :

IXYS Corporation

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free