IXTV22N60P
- Mfr.Part #
- IXTV22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS220
- Stock
- 11,451
- In Stock :
- 11,451
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 22A
- DS Breakdown Voltage-Min :
- 600 V
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation-Max :
- 400W Tc
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 66A
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 20ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3, Short Tab
- Surface Mount :
- No
- Turn-Off Delay Time :
- 60 ns
- Product Status :
- Obsolete
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 400W (Tc)
- FET Feature :
- -
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 600V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Supplier Device Package :
- PLUS220
- Drain-source On Resistance-Max :
- 0.35 Ω
- Packaging :
- Tube
- Number of Pins :
- 3
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Type :
- N-Channel
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 23 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PolarHV™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Current Rating :
- 22A
- Power Dissipation :
- 400W
- Datasheets
- IXTV22N60P
IXTV22N60P Documents
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-220-3, Short Tab
IXTV22N60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTV22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXTV22N60P Applications
There are a lot of IXYS
IXTV22N60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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