IXTV22N60P
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- Mfr.Part #
- IXTV22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS220
- Stock
- 11,451
- In Stock ：
- 11,451
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 400W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 60 ns
- Package Shape :
- RECTANGULAR
- Rise Time :
- 20ns
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Series :
- PolarHV™
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 400W Tc
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 66A
- Product Status :
- Obsolete
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 22A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.35 Ω
- RoHS Status :
- RoHS Compliant
- Published :
- 2006
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Terminal Position :
- Single
- Package / Case :
- TO-220-3, Short Tab
- Supplier Device Package :
- PLUS220
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Power Dissipation :
- 400W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- -
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Current Rating :
- 22A
- JESD-30 Code :
- R-PSIP-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Fall Time (Typ) :
- 23 ns
- DS Breakdown Voltage-Min :
- 600 V
- Voltage - Rated DC :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Number of Terminations :
- 3
- Manufacturer :
- IXYS Corporation
- Datasheets
- IXTV22N60P
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-220-3, Short Tab
IXTV22N60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTV22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXTV22N60P Applications
There are a lot of IXYS
IXTV22N60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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