IXTV18N60P
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- Mfr.Part #
- IXTV18N60P
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A PLUS220
- Stock
- 44,675
- In Stock ：
- 44,675
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 62 ns
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Product Status :
- Obsolete
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 360W Tc
- Power Dissipation (Max) :
- 360W (Tc)
- Drain to Source Breakdown Voltage :
- 600V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 360W
- Current Rating :
- 18A
- Vgs (Max) :
- ±30V
- Case Connection :
- DRAIN
- Rise Time :
- 22ns
- Pulsed Drain Current-Max (IDM) :
- 54A
- Number of Terminations :
- 2
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Pin Count :
- 3
- Packaging :
- Tube
- Surface Mount :
- yes
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 600 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 22 ns
- Voltage - Rated DC :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2006
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 18A
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Series :
- PolarHV™
- Package / Case :
- PLUS-220SMD
- Number of Terminals :
- 2
- Supplier Device Package :
- PLUS-220SMD
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 9A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.42Ohm
- Datasheets
- IXTV18N60P
N-Channel Tube 420m Ω @ 9A, 10V ±30V 2500pF @ 25V 49nC @ 10V 600V PLUS-220SMD
IXTV18N60PS Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 18A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 62 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 54A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTV18N60PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 54A.
a 600V drain to source voltage (Vdss)
IXTV18N60PS Applications
There are a lot of IXYS
IXTV18N60PS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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