IXTV02N250S
- Mfr.Part #
- IXTV02N250S
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 2500V 200MA PLUS220
- Stock
- 5,276
- In Stock :
- 5,276
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 2500 V
- Supplier Device Package :
- PLUS-220SMD
- Package :
- Tube
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 220
- Number of Terminals :
- 2
- Package / Case :
- PLUS-220SMD
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Packaging :
- Tube
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- 2.5kV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 116pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- FET Feature :
- -
- Terminal Position :
- Single
- Series :
- -
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2011
- Manufacturer :
- IXYS Corporation
- Drain-source On Resistance-Max :
- 450 Ω
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 57mW
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 83W (Tc)
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Drain to Source Voltage (Vdss) :
- 2500V
- Power Dissipation-Max (Abs) :
- 57 W
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 83W Tc
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 200mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 7.4nC @ 10V
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 450 Ω @ 50mA, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Mounting Type :
- Surface Mount
- Datasheets
- IXTV02N250S
N-Channel Tube 450 Ω @ 50mA, 10V ±20V 116pF @ 25V 7.4nC @ 10V 2500V PLUS-220SMD
IXTV02N250S Overview
A device's maximal input capacitance is 116pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 2.5kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.2A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 0.5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 2500 V.This transistor requires a 2500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTV02N250S Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 2.5kV voltage
based on its rated peak drain current 0.5A.
a 2500V drain to source voltage (Vdss)
IXTV02N250S Applications
There are a lot of IXYS
IXTV02N250S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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