IXTV18N60PS

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Mfr.Part #
IXTV18N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 18A PLUS-220SMD
Stock
14,561
In Stock :
14,561

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
360W (Tc)
Voltage - Rated DC :
600V
Current Rating :
18A
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Reach Compliance Code :
Compliant
Package / Case :
PLUS-220SMD
Package Shape :
RECTANGULAR
Mount :
Surface Mount
Number of Terminations :
2
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
62 ns
Number of Elements :
1
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
22 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Element Material :
SILICON
Element Configuration :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.42Ohm
Lead Free :
Lead Free
Product Status :
Obsolete
Surface Mount :
yes
Power Dissipation :
360W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
600 V
Drain to Source Voltage (Vdss) :
600V
Manufacturer :
IXYS Corporation
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
Pulsed Drain Current-Max (IDM) :
54A
Series :
PolarHV™
Package :
Tube
Continuous Drain Current (ID) :
18A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
Gull wing
Number of Terminals :
2
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
PLUS-220SMD
Terminal Position :
Single
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Mounting Type :
Surface Mount
Power Dissipation-Max :
360W Tc
Pin Count :
3
Drain to Source Breakdown Voltage :
600V
Vgs (Max) :
±30V
Pbfree Code :
yes
Transistor Application :
SWITCHING
Rise Time :
22ns
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Polarity/Channel Type :
N-Channel
Published :
2006
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
420m Ω @ 9A, 10V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Datasheets
IXTV18N60PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV18N60PS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IXTV18N60PS pinout, IXTV18N60PS datasheet PDF, IXTV18N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV18N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 420m Ω @ 9A, 10V ±30V 2500pF @ 25V 49nC @ 10V 600V PLUS-220SMD

IXTV18N60PS Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 18A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 62 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 54A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTV18N60PS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 54A.
a 600V drain to source voltage (Vdss)


IXTV18N60PS Applications


There are a lot of IXYS
IXTV18N60PS applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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