IXTV03N400S

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

290 Ω @ 500mA, 10V

Package :

Tube

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

16.3nC @ 10V

Additional Feature :

AVALANCHE RATED

Power Dissipation :

130W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Power Dissipation-Max :

130W Tc

Series :

--

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

290 Ω

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

4000 V

FET Type :

N-Channel

Power Dissipation (Max) :

130W (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2012

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Package / Case :

PLUS-220SMD

Number of Terminations :

2

Manufacturer :

IXYS Corporation

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 25V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Continuous Drain Current (ID) :

300mA

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

130 W

Product Status :

Obsolete

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

4000V

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

800A

Number of Elements :

1

Surface Mount :

yes

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

300A

Drain to Source Breakdown Voltage :

4kV

Number of Pins :

220

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Supplier Device Package :

PLUS-220SMD