IXTV200N10T

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Mfr.Part #
IXTV200N10T
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 100V 200A PLUS220
Stock
22,451
In Stock :
22,451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
550W Tc
FET Type :
N-Channel
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
200A
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
200 A
Qualification Status :
Not Qualified
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Supplier Device Package :
PLUS220
Mount :
Through Hole
JESD-609 Code :
e1
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Pbfree Code :
yes
ECCN Code :
EAR99
Fall Time (Typ) :
34 ns
Avalanche Energy Rating (Eas) :
1500 mJ
Package :
Tube
Manufacturer :
IXYS Corporation
Surface Mount :
No
Published :
2008
Packaging :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
200A Tc
FET Feature :
--
Product Status :
Obsolete
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
550 W
Operating Mode :
ENHANCEMENT MODE
Rise Time :
31ns
Series :
TrenchMV™
Drain-source On Resistance-Max :
0.0055Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Turn-Off Delay Time :
45 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
500A
Power Dissipation :
550W
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
100 V
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Package / Case :
TO-220-3, Short Tab
JESD-30 Code :
R-PSIP-T3
Drain to Source Voltage (Vdss) :
100V
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Number of Terminals :
3
Element Configuration :
Single
Power Dissipation (Max) :
550W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Drain to Source Breakdown Voltage :
100V
Datasheets
IXTV200N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV200N10T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Package / Case:TO-220-3, Short Tab, Number of Terminations:3, IXTV200N10T pinout, IXTV200N10T datasheet PDF, IXTV200N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV200N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV200N10T


N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V 100V TO-220-3, Short Tab

IXTV200N10T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 200A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 200 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 500A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100 V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTV200N10T Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)


IXTV200N10T Applications


There are a lot of IXYS
IXTV200N10T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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