IXTV200N10T
- Mfr.Part #
- IXTV200N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A PLUS220
- Stock
- 22,451
- In Stock :
- 22,451
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 550W Tc
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 200A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Drain Current-Max (Abs) (ID) :
- 200 A
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Supplier Device Package :
- PLUS220
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 34 ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Package :
- Tube
- Manufacturer :
- IXYS Corporation
- Surface Mount :
- No
- Published :
- 2008
- Packaging :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- FET Feature :
- --
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max (Abs) :
- 550 W
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 31ns
- Series :
- TrenchMV™
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Turn-Off Delay Time :
- 45 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 500A
- Power Dissipation :
- 550W
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 100 V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Package / Case :
- TO-220-3, Short Tab
- JESD-30 Code :
- R-PSIP-T3
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 550W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Drain to Source Breakdown Voltage :
- 100V
- Datasheets
- IXTV200N10T
N-Channel Tube 5.5m Ω @ 50A, 10V ±30V 9400pF @ 25V 152nC @ 10V 100V TO-220-3, Short Tab
IXTV200N10T Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 200A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 200 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 500A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100 V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTV200N10T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 500A.
a 100V drain to source voltage (Vdss)
IXTV200N10T Applications
There are a lot of IXYS
IXTV200N10T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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