IXTV110N25TS
- Mfr.Part #
- IXTV110N25TS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 110A PLUS220SMD
- Stock
- 1,572
- In Stock :
- 1,572
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Package / Case :
- PLUS-220SMD
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Drain Current-Max (Abs) (ID) :
- 110 A
- Power Dissipation-Max (Abs) :
- 694 W
- Power Dissipation (Max) :
- 694W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 60 ns
- DS Breakdown Voltage-Min :
- 250 V
- Fall Time (Typ) :
- 27 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Terminal Position :
- Single
- Manufacturer :
- IXYS Corporation
- Rise Time :
- 27ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Supplier Device Package :
- PLUS-220SMD
- Number of Terminals :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 250V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 694W
- Packaging :
- Tube
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Series :
- --
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 110A
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 250V
- Published :
- 2012
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.024Ohm
- Element Configuration :
- Single
- Power Dissipation-Max :
- 694W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSIP-T2
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Number of Terminations :
- 2
- Datasheets
- IXTV110N25TS
N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V PLUS-220SMD
IXTV110N25TS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.110 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 300 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 250 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTV110N25TS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 300 A.
a 250V drain to source voltage (Vdss)
IXTV110N25TS Applications
There are a lot of IXYS
IXTV110N25TS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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