IXTV110N25TS

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Mfr.Part #
IXTV110N25TS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 250V 110A PLUS220SMD
Stock
1,572
In Stock :
1,572

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Number of Elements :
1
Mount :
Surface Mount
Package / Case :
PLUS-220SMD
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
300 A
Drain Current-Max (Abs) (ID) :
110 A
Power Dissipation-Max (Abs) :
694 W
Power Dissipation (Max) :
694W (Tc)
Terminal Form :
THROUGH-HOLE
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
RoHS Status :
RoHS Compliant
Pin Count :
3
FET Type :
N-Channel
Turn-Off Delay Time :
60 ns
DS Breakdown Voltage-Min :
250 V
Fall Time (Typ) :
27 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Terminal Position :
Single
Manufacturer :
IXYS Corporation
Rise Time :
27ns
Avalanche Energy Rating (Eas) :
1000 mJ
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Supplier Device Package :
PLUS-220SMD
Number of Terminals :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Breakdown Voltage :
250V
Polarity/Channel Type :
N-Channel
Power Dissipation :
694W
Packaging :
Tube
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Surface Mount :
No
Lead Free :
Lead Free
Series :
--
FET Feature :
--
Continuous Drain Current (ID) :
110A
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
250V
Published :
2012
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.024Ohm
Element Configuration :
Single
Power Dissipation-Max :
694W Tc
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSIP-T2
Product Status :
Obsolete
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Number of Terminations :
2
Datasheets
IXTV110N25TS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV110N25TS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, IXTV110N25TS pinout, IXTV110N25TS datasheet PDF, IXTV110N25TS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV110N25TS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV110N25TS


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V PLUS-220SMD

IXTV110N25TS Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.110 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 300 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 250 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTV110N25TS Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 300 A.
a 250V drain to source voltage (Vdss)


IXTV110N25TS Applications


There are a lot of IXYS
IXTV110N25TS applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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