IXTV36N50P
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- Mfr.Part #
- IXTV36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A PLUS220
- Stock
- 11,951
- In Stock ：
- 11,951
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 108A
- Number of Terminations :
- 3
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS Corporation
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package :
- Tube
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 540W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 30V
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Series :
- PolarHV™
- Package / Case :
- TO-220-3, Short Tab
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Voltage - Rated DC :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Lead Free :
- Lead Free
- Published :
- 2006
- Current Rating :
- 36A
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 75 ns
- Fall Time (Typ) :
- 21 ns
- Power Dissipation-Max :
- 540W Tc
- Package Shape :
- RECTANGULAR
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 36A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.17Ohm
- Drain to Source Voltage (Vdss) :
- 500V
- Rise Time :
- 27ns
- Surface Mount :
- No
- Power Dissipation :
- 540W
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Supplier Device Package :
- PLUS220
- Drain to Source Breakdown Voltage :
- 500V
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- IXTV36N50P
N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-220-3, Short Tab
IXTV36N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTV36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 500V drain to source voltage (Vdss)
IXTV36N50P Applications
There are a lot of IXYS
IXTV36N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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