IXTV30N60PS
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- Mfr.Part #
- IXTV30N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A PLUS-220SMD
- Stock
- 28,516
- In Stock ：
- 28,516
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Product Status :
- Obsolete
- Lead Free :
- Lead Free
- Package / Case :
- PLUS-220SMD
- Power Dissipation-Max :
- 540W Tc
- Power Dissipation :
- 540W
- Voltage - Rated DC :
- 600V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Packaging :
- Tube
- Number of Terminals :
- 2
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PolarHV™
- Terminal Position :
- Single
- Current Rating :
- 30A
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- PLUS-220SMD
- Published :
- 2006
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Power Dissipation (Max) :
- 540W (Tc)
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Turn-Off Delay Time :
- 80 ns
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 20ns
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 80A
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.24Ohm
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Continuous Drain Current (ID) :
- 30A
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 600V
- Number of Elements :
- 1
- Manufacturer :
- IXYS Corporation
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IXTV30N60PS
N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V PLUS-220SMD
IXTV30N60PS Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTV30N60PS Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTV30N60PS Applications
There are a lot of IXYS
IXTV30N60PS applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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