IXTV30N60P
- Mfr.Part #
- IXTV30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A PLUS220
- Stock
- 37,656
- In Stock :
- 37,656
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSIP-T3
- Manufacturer :
- IXYS Corporation
- FET Type :
- N-Channel
- FET Feature :
- --
- Package / Case :
- TO-220-3, Short Tab
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Power Dissipation (Max) :
- 540W (Tc)
- Turn-Off Delay Time :
- 80 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Power Dissipation :
- 540W
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.24Ohm
- Pbfree Code :
- yes
- Series :
- PolarHV™
- Pulsed Drain Current-Max (IDM) :
- 80A
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 600 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 20ns
- Packaging :
- Tube
- Current Rating :
- 30A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 540W Tc
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Product Status :
- Obsolete
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 25 ns
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- Voltage - Rated DC :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 30A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pin Count :
- 3
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Published :
- 2006
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 600V
- Supplier Device Package :
- PLUS220
- Datasheets
- IXTV30N60P
N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-220-3, Short Tab
IXTV30N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTV30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTV30N60P Applications
There are a lot of IXYS
IXTV30N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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