IXTV30N60P

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Mfr.Part #
IXTV30N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 600V 30A PLUS220
Stock
37,656
In Stock :
37,656

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Vgs (Max) :
±30V
JESD-30 Code :
R-PSIP-T3
Manufacturer :
IXYS Corporation
FET Type :
N-Channel
FET Feature :
--
Package / Case :
TO-220-3, Short Tab
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-609 Code :
e1
Qualification Status :
Not Qualified
Surface Mount :
No
Power Dissipation (Max) :
540W (Tc)
Turn-Off Delay Time :
80 ns
Gate to Source Voltage (Vgs) :
30V
Number of Elements :
1
Power Dissipation :
540W
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.24Ohm
Pbfree Code :
yes
Series :
PolarHV™
Pulsed Drain Current-Max (IDM) :
80A
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
600 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Rise Time :
20ns
Packaging :
Tube
Current Rating :
30A
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Number of Pins :
3
Number of Terminations :
3
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
540W Tc
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
25 ns
Drain to Source Breakdown Voltage :
600V
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Voltage - Rated DC :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
30A
Vgs(th) (Max) @ Id :
5V @ 250μA
Pin Count :
3
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Published :
2006
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
600V
Supplier Device Package :
PLUS220
Datasheets
IXTV30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV30N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Short Tab, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXTV30N60P pinout, IXTV30N60P datasheet PDF, IXTV30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTV30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-220-3, Short Tab

IXTV30N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTV30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTV30N60P Applications


There are a lot of IXYS
IXTV30N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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