IXTV30N50PS

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Mfr.Part #
IXTV30N50PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 500V 30A PLUS-220SMD
Stock
39,867
In Stock :
39,867

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Power Dissipation (Max) :
460W (Tc)
Turn-Off Delay Time :
75 ns
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Rise Time :
27ns
Published :
2006
Series :
PolarHV™
Fall Time (Typ) :
21 ns
Drain to Source Voltage (Vdss) :
500V
Supplier Device Package :
PLUS-220SMD
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
PLUS-220SMD
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Obsolete
Voltage - Rated DC :
500V
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
1200 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Transistor Application :
SWITCHING
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
460W Tc
Terminal Position :
Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Terminals :
2
Power Dissipation :
460W
Package :
Tube
Surface Mount :
yes
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Pbfree Code :
yes
Lead Free :
Lead Free
Number of Terminations :
2
Number of Elements :
1
Current Rating :
30A
JESD-30 Code :
R-PSSO-G2
Drain-source On Resistance-Max :
0.2Ohm
Number of Pins :
3
FET Feature :
--
Vgs (Max) :
±30V
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Mount :
Surface Mount
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Terminal Form :
Gull wing
DS Breakdown Voltage-Min :
500 V
Drain to Source Breakdown Voltage :
500V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
75A
Continuous Drain Current (ID) :
30A
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
30V
Datasheets
IXTV30N50PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV30N50PS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:PLUS-220SMD, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Pins:3, IXTV30N50PS pinout, IXTV30N50PS datasheet PDF, IXTV30N50PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV30N50PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V PLUS-220SMD

IXTV30N50PS Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4150pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 75A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTV30N50PS Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)


IXTV30N50PS Applications


There are a lot of IXYS
IXTV30N50PS applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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