IXTV30N50P
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- Mfr.Part #
- IXTV30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A PLUS220
- Stock
- 42,442
- In Stock ：
- 42,442
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Mount :
- Through Hole
- Power Dissipation :
- 460W
- Product Status :
- Obsolete
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 30A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Published :
- 2006
- Reach Compliance Code :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 75A
- Fall Time (Typ) :
- 21 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Series :
- PolarHV™
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Package :
- Tube
- Rise Time :
- 27ns
- Drain-source On Resistance-Max :
- 0.2Ohm
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 460W (Tc)
- Current Rating :
- 30A
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 500V
- Package / Case :
- TO-220-3, Short Tab
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Surface Mount :
- No
- Supplier Device Package :
- PLUS220
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 75 ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Power Dissipation-Max :
- 460W Tc
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Datasheets
- IXTV30N50P
N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-220-3, Short Tab
IXTV30N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.The maximum input capacitance of this device is 4150pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 75A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTV30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXTV30N50P Applications
There are a lot of IXYS
IXTV30N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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