IXTV26N60PS

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Mfr.Part #
IXTV26N60PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 600V 26A PLUS-220SMD
Stock
30,521
In Stock :
30,521

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Series :
PolarHV™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Surface Mount
Terminal Form :
Gull wing
Number of Elements :
1
Number of Pins :
3
Drain-source On Resistance-Max :
0.27Ohm
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
RoHS Compliant
Published :
2006
Current Rating :
26A
Drain to Source Breakdown Voltage :
600V
FET Type :
N-Channel
Turn-Off Delay Time :
75 ns
Fall Time (Typ) :
21 ns
Case Connection :
DRAIN
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
65A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS Corporation
Voltage - Rated DC :
600V
Avalanche Energy Rating (Eas) :
1200 mJ
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Transistor Application :
SWITCHING
Package / Case :
PLUS-220SMD
Product Status :
Obsolete
Supplier Device Package :
PLUS-220SMD
Power Dissipation (Max) :
460W (Tc)
Package :
Tube
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Reach Compliance Code :
Compliant
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
26A
Terminal Position :
Single
Power Dissipation-Max :
460W Tc
Power Dissipation :
460W
Element Configuration :
Single
Rise Time :
27ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
26A Tc
Drain to Source Voltage (Vdss) :
600V
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
2
Rds On (Max) @ Id, Vgs :
270m Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
600 V
Polarity/Channel Type :
N-Channel
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Gate to Source Voltage (Vgs) :
30V
Datasheets
IXTV26N60PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTV26N60PS from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Package / Case:PLUS-220SMD, Mounting Type:Surface Mount, IXTV26N60PS pinout, IXTV26N60PS datasheet PDF, IXTV26N60PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTV26N60PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V PLUS-220SMD

IXTV26N60PS Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4150pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 26A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 65A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTV26N60PS Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)


IXTV26N60PS Applications


There are a lot of IXYS
IXTV26N60PS applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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