IXTV26N50PS
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- Mfr.Part #
- IXTV26N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A PLUS-220SMD
- Stock
- 16,057
- In Stock ：
- 16,057
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 20 ns
- Drain-source On Resistance-Max :
- 0.23 Ω
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Terminal Position :
- Single
- Published :
- 2006
- Number of Terminals :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 58 ns
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Number of Pins :
- 3
- Surface Mount :
- yes
- Pin Count :
- 3
- Package / Case :
- PLUS-220SMD
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS Corporation
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 500 V
- Current Rating :
- 26A
- Product Status :
- Obsolete
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- PLUS-220SMD
- Continuous Drain Current (ID) :
- 26A
- Series :
- PolarHV™
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 25ns
- Power Dissipation :
- 400W
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 460W Tc
- Power Dissipation (Max) :
- 460W (Tc)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 500V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 78A
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTV26N50PS
N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V PLUS-220SMD
IXTV26N50PS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 58 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 78A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTV26N50PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTV26N50PS Applications
There are a lot of IXYS
IXTV26N50PS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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