IXTV26N50P
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- Mfr.Part #
- IXTV26N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 26A PLUS220
- Stock
- 39,927
- In Stock ：
- 39,927
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Breakdown Voltage :
- 500V
- Surface Mount :
- No
- Fall Time (Typ) :
- 20 ns
- JESD-30 Code :
- R-PSIP-T3
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.23 Ω
- Transistor Application :
- SWITCHING
- Current Rating :
- 26A
- Published :
- 2006
- Voltage - Rated DC :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS Corporation
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Power Dissipation (Max) :
- 460W (Tc)
- Power Dissipation :
- 400W
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13A, 10V
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 26A
- Supplier Device Package :
- PLUS220
- Power Dissipation-Max :
- 460W Tc
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 78A
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Product Status :
- Obsolete
- Transistor Element Material :
- SILICON
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 500 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Pin Count :
- 3
- FET Feature :
- --
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 58 ns
- Package / Case :
- TO-220-3, Short Tab
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Series :
- PolarHV™
- Rise Time :
- 25ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Datasheets
- IXTV26N50P
N-Channel Tube 230m Ω @ 13A, 10V ±30V 3600pF @ 25V 65nC @ 10V 500V TO-220-3, Short Tab
IXTV26N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 3600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 58 ns.Its maximum pulsed drain current is 78A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTV26N50P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 78A.
a 500V drain to source voltage (Vdss)
IXTV26N50P Applications
There are a lot of IXYS
IXTV26N50P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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