IXFT32N50Q

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Mfr.Part #
IXFT32N50Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 32A TO268
Stock
49,016
In Stock :
49,016

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Terminal Finish :
Matte Tin (Sn)
Drain to Source Breakdown Voltage :
500V
Package Shape :
RECTANGULAR
Rds On (Max) @ Id, Vgs :
160m Ω @ 16A, 10V
JESD-30 Code :
R-PSSO-G2
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Drain-source On Resistance-Max :
0.16Ohm
Product Status :
Obsolete
Input Capacitance (Ciss) (Max) @ Vds :
4925pF @ 25V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Terminations :
2
Surface Mount :
yes
JEDEC-95 Code :
TO-268AA
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Rise Time :
42ns
Avalanche Energy Rating (Eas) :
1500 mJ
Number of Elements :
1
Continuous Drain Current (ID) :
32A
Power Dissipation (Max) :
360W (Tc)
Current Rating :
32A
Manufacturer :
IXYS Corporation
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
360 W
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
FET Type :
N-Channel
Voltage - Rated DC :
500V
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
416W
Vgs (Max) :
±20V
Pin Count :
4
Published :
2001
Power Dissipation-Max :
360W Tc
Series :
HiPerFET™
Drain to Source Voltage (Vdss) :
500V
Mount :
Surface Mount
Terminal Form :
Gull wing
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
128A
JESD-609 Code :
e3
Supplier Device Package :
TO-268
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
32A Tc
Fall Time (Typ) :
20 ns
DS Breakdown Voltage-Min :
500 V
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Base Product Number :
IXFT32
Reach Compliance Code :
not_compliant
Terminal Position :
Single
Factory Lead Time :
8 Weeks
Lead Free :
Lead Free
Number of Terminals :
2
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Turn-Off Delay Time :
75 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
32 A
Datasheets
IXFT32N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT32N50Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXFT32N50Q pinout, IXFT32N50Q datasheet PDF, IXFT32N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT32N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT32N50Q


N-Channel Tube 160m Ω @ 16A, 10V ±20V 4925pF @ 25V 190nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT32N50Q Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4925pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 32A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.32 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 128A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFT32N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)


IXFT32N50Q Applications


There are a lot of IXYS
IXFT32N50Q applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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