IXFT32N50Q
- Mfr.Part #
- IXFT32N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO268
- Stock
- 49,016
- In Stock :
- 49,016
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 500V
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 16A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Drain-source On Resistance-Max :
- 0.16Ohm
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 4925pF @ 25V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Terminations :
- 2
- Surface Mount :
- yes
- JEDEC-95 Code :
- TO-268AA
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Rise Time :
- 42ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 32A
- Power Dissipation (Max) :
- 360W (Tc)
- Current Rating :
- 32A
- Manufacturer :
- IXYS Corporation
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 360 W
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 416W
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Published :
- 2001
- Power Dissipation-Max :
- 360W Tc
- Series :
- HiPerFET™
- Drain to Source Voltage (Vdss) :
- 500V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 128A
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-268
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Fall Time (Typ) :
- 20 ns
- DS Breakdown Voltage-Min :
- 500 V
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Base Product Number :
- IXFT32
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Number of Terminals :
- 2
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Turn-Off Delay Time :
- 75 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 32 A
- Datasheets
- IXFT32N50Q

N-Channel Tube 160m Ω @ 16A, 10V ±20V 4925pF @ 25V 190nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT32N50Q Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4925pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 32A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.32 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 128A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFT32N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)
IXFT32N50Q Applications
There are a lot of IXYS
IXFT32N50Q applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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