IXFT12N100F

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Mfr.Part #
IXFT12N100F
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO268
Stock
6,229
In Stock :
6,229

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Termination :
SMD/SMT
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Published :
2009
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Min Operating Temperature :
-55 °C
Terminal Position :
Single
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
1kV
Element Configuration :
Single
Pin Count :
4
Rise Time :
9.8ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation :
300W
Packaging :
Tube
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Power Dissipation-Max :
300W Tc
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Product Status :
Obsolete
Power Dissipation (Max) :
300W (Tc)
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
not_compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
10 Weeks
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Drain-source On Resistance-Max :
1.05 Ω
Supplier Device Package :
TO-268 (IXFT)
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 6A, 10V
Max Power Dissipation :
300 W
Turn-Off Delay Time :
31 ns
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Drain to Source Voltage (Vdss) :
1000V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Continuous Drain Current (ID) :
12A
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Qualification Status :
Not Qualified
FET Feature :
--
Nominal Vgs :
5.5 V
Base Product Number :
IXFT12
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Surface Mount :
yes
Pulsed Drain Current-Max (IDM) :
48A
Dual Supply Voltage :
1kV
FET Type :
N-Channel
RoHS :
Compliant
Fall Time (Typ) :
12 ns
Number of Terminals :
2
Package :
Tube
JEDEC-95 Code :
TO-268AA
Max Operating Temperature :
150 °C
Manufacturer :
IXYS Corporation
Series :
HiPerRF™
Drain to Source Resistance :
1.05 Ω
Number of Pins :
3
DS Breakdown Voltage-Min :
1000 V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, IXFT12N100F pinout, IXFT12N100F datasheet PDF, IXFT12N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT12N100F


N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT12N100F Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.05 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFT12N100F Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 1.05 Ω
a 1000V drain to source voltage (Vdss)


IXFT12N100F Applications


There are a lot of IXYS
IXFT12N100F applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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