IXFT12N100F

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Mfr.Part #
IXFT12N100F
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO268
Stock
6,229
In Stock :
6,229

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
300W Tc
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
1kV
JESD-609 Code :
e3
Pbfree Code :
yes
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Factory Lead Time :
10 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
Gull wing
RoHS :
Compliant
Number of Terminals :
2
RoHS Status :
RoHS Compliant
Vgs (Max) :
±20V
Pin Count :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Shape :
RECTANGULAR
Number of Elements :
1
Min Operating Temperature :
-55 °C
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
1000V
Package :
Tube
Reach Compliance Code :
not_compliant
Avalanche Energy Rating (Eas) :
1000 mJ
Power Dissipation (Max) :
300W (Tc)
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
2
Nominal Vgs :
5.5 V
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Termination :
SMD/SMT
JEDEC-95 Code :
TO-268AA
Max Power Dissipation :
300 W
Max Operating Temperature :
150 °C
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Published :
2009
DS Breakdown Voltage-Min :
1000 V
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS Corporation
FET Type :
N-Channel
Continuous Drain Current (ID) :
12A
Transistor Element Material :
SILICON
Base Product Number :
IXFT12
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Resistance :
1.05 Ω
Drain-source On Resistance-Max :
1.05 Ω
Series :
HiPerRF™
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Surface Mount :
yes
Packaging :
Tube
Turn-Off Delay Time :
31 ns
FET Feature :
--
Fall Time (Typ) :
12 ns
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 6A, 10V
Dual Supply Voltage :
1kV
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins :
3
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
48A
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn)
Rise Time :
9.8ns
Supplier Device Package :
TO-268 (IXFT)
Power Dissipation :
300W
Mounting Type :
Surface Mount
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Pins:3, Mounting Type:Surface Mount, IXFT12N100F pinout, IXFT12N100F datasheet PDF, IXFT12N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT12N100F


N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT12N100F Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.05 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFT12N100F Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 1.05 Ω
a 1000V drain to source voltage (Vdss)


IXFT12N100F Applications


There are a lot of IXYS
IXFT12N100F applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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