IXFT12N100F

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Mfr.Part #
IXFT12N100F
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO268
Stock
6,229
In Stock :
6,229

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Base Product Number :
IXFT12
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Drain to Source Breakdown Voltage :
1kV
Published :
2009
Vgs (Max) :
±20V
Series :
HiPerRF™
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 6A, 10V
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS Corporation
Element Configuration :
Single
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Rise Time :
9.8ns
Pbfree Code :
yes
Power Dissipation :
300W
DS Breakdown Voltage-Min :
1000 V
JESD-30 Code :
R-PSSO-G2
Additional Feature :
AVALANCHE RATED
RoHS :
Compliant
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
300W Tc
Case Connection :
DRAIN
FET Feature :
--
Package Shape :
RECTANGULAR
Factory Lead Time :
10 Weeks
Reach Compliance Code :
not_compliant
Pin Count :
4
JEDEC-95 Code :
TO-268AA
Number of Pins :
3
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
48A
Package :
Tube
Termination :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Continuous Drain Current (ID) :
12A
Fall Time (Typ) :
12 ns
Max Power Dissipation :
300 W
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Number of Terminals :
2
Nominal Vgs :
5.5 V
Supplier Device Package :
TO-268 (IXFT)
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Drain-source On Resistance-Max :
1.05 Ω
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
2
Dual Supply Voltage :
1kV
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
31 ns
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
ECCN Code :
EAR99
Product Status :
Obsolete
Surface Mount :
yes
Min Operating Temperature :
-55 °C
Operating Temperature :
-55°C~150°C TJ
Drain to Source Resistance :
1.05 Ω
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Terminal Finish :
Matte Tin (Sn)
Avalanche Energy Rating (Eas) :
1000 mJ
Drain to Source Voltage (Vdss) :
1000V
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
300W (Tc)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IXFT12N100F pinout, IXFT12N100F datasheet PDF, IXFT12N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT12N100F


N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT12N100F Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.05 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFT12N100F Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 1.05 Ω
a 1000V drain to source voltage (Vdss)


IXFT12N100F Applications


There are a lot of IXYS
IXFT12N100F applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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