IXFT12N100F

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Mfr.Part #
IXFT12N100F
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12A TO268
Stock
6,229
In Stock :
6,229

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Application :
SWITCHING
Dual Supply Voltage :
1kV
Reach Compliance Code :
not_compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
10 Weeks
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
12 ns
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 6A, 10V
Max Power Dissipation :
300 W
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
48A
Additional Feature :
AVALANCHE RATED
Number of Terminations :
2
Max Operating Temperature :
150 °C
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
RoHS Status :
RoHS Compliant
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Terminal Finish :
Matte Tin (Sn)
DS Breakdown Voltage-Min :
1000 V
FET Type :
N-Channel
RoHS :
Compliant
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Termination :
SMD/SMT
Number of Terminals :
2
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Base Product Number :
IXFT12
Manufacturer :
IXYS Corporation
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Continuous Drain Current (ID) :
12A
Power Dissipation (Max) :
300W (Tc)
Drain-source On Resistance-Max :
1.05 Ω
FET Feature :
--
Packaging :
Tube
Published :
2009
Gate to Source Voltage (Vgs) :
20V
Product Status :
Obsolete
Drain to Source Breakdown Voltage :
1kV
JEDEC-95 Code :
TO-268AA
Drain to Source Resistance :
1.05 Ω
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Drain to Source Voltage (Vdss) :
1000V
ECCN Code :
EAR99
Pin Count :
4
Supplier Device Package :
TO-268 (IXFT)
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Min Operating Temperature :
-55 °C
Rise Time :
9.8ns
Number of Elements :
1
Turn-Off Delay Time :
31 ns
Transistor Element Material :
SILICON
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Series :
HiPerRF™
Surface Mount :
yes
Pbfree Code :
yes
Nominal Vgs :
5.5 V
Terminal Position :
Single
Package Shape :
RECTANGULAR
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
300W Tc
Power Dissipation :
300W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT12N100F pinout, IXFT12N100F datasheet PDF, IXFT12N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT12N100F


N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT12N100F Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.05 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFT12N100F Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 1.05 Ω
a 1000V drain to source voltage (Vdss)


IXFT12N100F Applications


There are a lot of IXYS
IXFT12N100F applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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