IXFT12N90Q
- Mfr.Part #
- IXFT12N90Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 12A TO268
- Stock
- 49,983
- In Stock :
- 49,983
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Manufacturer :
- IXYS
- Number of Terminals :
- 2
- JEDEC-95 Code :
- TO-268AA
- Drain-source On Resistance-Max :
- 0.9Ohm
- Terminal Position :
- Single
- Width :
- 5.21 mm
- Power Dissipation :
- 300W
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Series :
- HiPerFET™
- Published :
- 2000
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 900V
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Turn-Off Delay Time :
- 40 ns
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Product Status :
- Active
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Pin Count :
- 4
- Drain to Source Breakdown Voltage :
- 900V
- Pulsed Drain Current-Max (IDM) :
- 48A
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max (Abs) :
- 300 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 12A
- Drain Current-Max (Abs) (ID) :
- 12 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 16.13 mm
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Package :
- Tube
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 300W (Tc)
- Brand :
- IXYS
- Fall Time (Typ) :
- 15 ns
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 23ns
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 6A, 10V
- Base Product Number :
- IXFT12
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Mounting Style :
- SMD/SMT
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Height :
- 21.34 mm
- Supplier Device Package :
- TO-268
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Surface Mount
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 900 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Datasheets
- IXFT12N90Q

N-Channel Tube 900m Ω @ 6A, 10V ±20V 2900pF @ 25V 90nC @ 10V 900V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT12N90Q Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2900pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.12 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Peak drain current for this device is 48A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFT12N90Q Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 48A.
a 900V drain to source voltage (Vdss)
IXFT12N90Q Applications
There are a lot of IXYS
IXFT12N90Q applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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