IXFT12N90Q

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Mfr.Part #
IXFT12N90Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 900V 12A TO268
Stock
49,983
In Stock :
49,983

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Power Dissipation-Max :
300W Tc
Number of Pins :
3
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Manufacturer :
IXYS
Number of Terminals :
2
JEDEC-95 Code :
TO-268AA
Drain-source On Resistance-Max :
0.9Ohm
Terminal Position :
Single
Width :
5.21 mm
Power Dissipation :
300W
Element Configuration :
Single
Number of Channels :
1 Channel
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Series :
HiPerFET™
Published :
2000
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
900V
Number of Terminations :
2
Vgs(th) (Max) @ Id :
5.5V @ 4mA
Turn-Off Delay Time :
40 ns
Reach Compliance Code :
not_compliant
Transistor Element Material :
SILICON
Surface Mount :
yes
Product Status :
Active
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Pin Count :
4
Drain to Source Breakdown Voltage :
900V
Pulsed Drain Current-Max (IDM) :
48A
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max (Abs) :
300 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
12A
Drain Current-Max (Abs) (ID) :
12 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
16.13 mm
Transistor Type :
1 N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Package :
Tube
JESD-609 Code :
e3
Case Connection :
DRAIN
Power Dissipation (Max) :
300W (Tc)
Brand :
IXYS
Fall Time (Typ) :
15 ns
Polarity/Channel Type :
N-Channel
Rise Time :
23ns
Rds On (Max) @ Id, Vgs :
900m Ω @ 6A, 10V
Base Product Number :
IXFT12
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Mounting Style :
SMD/SMT
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Height :
21.34 mm
Supplier Device Package :
TO-268
Pbfree Code :
yes
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Mount :
Surface Mount
Packaging :
Tube
DS Breakdown Voltage-Min :
900 V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
Datasheets
IXFT12N90Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N90Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT12N90Q pinout, IXFT12N90Q datasheet PDF, IXFT12N90Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT12N90Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT12N90Q


N-Channel Tube 900m Ω @ 6A, 10V ±20V 2900pF @ 25V 90nC @ 10V 900V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT12N90Q Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2900pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.With a drain-source breakdown voltage of 900V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 900V.12 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Peak drain current for this device is 48A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 900 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFT12N90Q Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 48A.
a 900V drain to source voltage (Vdss)


IXFT12N90Q Applications


There are a lot of IXYS
IXFT12N90Q applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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