IXFT13N80Q

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Mfr.Part #
IXFT13N80Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 800V 13A TO268
Stock
31,673
In Stock :
31,673

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation (Max) :
250W (Tc)
Drain to Source Voltage (Vdss) :
800V
Drain to Source Breakdown Voltage :
800V
Power Dissipation-Max :
250W Tc
Configuration :
Single
Brand :
IXYS
Reach Compliance Code :
not_compliant
Input Capacitance (Ciss) (Max) @ Vds :
3250pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
SMD/SMT
Manufacturer :
IXYS
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Number of Terminations :
2
Terminal Form :
Gull wing
FET Type :
N-Channel
Published :
2000
Drain-source On Resistance-Max :
0.8Ohm
Channel Mode :
Enhancement
Minimum Operating Temperature :
- 55 C
JEDEC-95 Code :
TO-268
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
19 ns
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Polarity/Channel Type :
N-Channel
Drain Current-Max (Abs) (ID) :
13 A
Pbfree Code :
yes
Height :
5.1 mm
Length :
16.05 mm
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
250 W
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
800 V
Continuous Drain Current (ID) :
13A
Tradename :
HyperFET
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
52A
Avalanche Energy Rating (Eas) :
750 mJ
Transistor Polarity :
N-Channel
Number of Terminals :
2
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
700m Ω @ 6.5A, 10V
Packaging :
Tube
Vgs (Max) :
±20V
Mount :
Surface Mount
Rise Time :
36ns
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
13A Tc
FET Feature :
--
Package Shape :
RECTANGULAR
Base Product Number :
IXFT13
Turn-Off Delay Time :
55 ns
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Pin Count :
4
Series :
HiPerFET™
Product Status :
Active
Qualification Status :
Not Qualified
Width :
14 mm
Power Dissipation :
250W
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4.5V @ 4mA
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
JESD-30 Code :
R-PSSO-G2
Package :
Tube
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED
Datasheets
IXFT13N80Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N80Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, IXFT13N80Q pinout, IXFT13N80Q datasheet PDF, IXFT13N80Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N80Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT13N80Q


N-Channel Tube 700m Ω @ 6.5A, 10V ±20V 3250pF @ 25V 90nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT13N80Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3250pF @ 25V.This device conducts a continuous drain current (ID) of 13A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 13 A.When the device is turned off, a turn-off delay time of 55 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 52A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFT13N80Q Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)


IXFT13N80Q Applications


There are a lot of IXYS
IXFT13N80Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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