IXFT13N80Q
- Mfr.Part #
- IXFT13N80Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 13A TO268
- Stock
- 31,673
- In Stock :
- 31,673
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 250W (Tc)
- Drain to Source Voltage (Vdss) :
- 800V
- Drain to Source Breakdown Voltage :
- 800V
- Power Dissipation-Max :
- 250W Tc
- Configuration :
- Single
- Brand :
- IXYS
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3250pF @ 25V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- SMD/SMT
- Manufacturer :
- IXYS
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- TO-268
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Published :
- 2000
- Drain-source On Resistance-Max :
- 0.8Ohm
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- JEDEC-95 Code :
- TO-268
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 19 ns
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 13 A
- Pbfree Code :
- yes
- Height :
- 5.1 mm
- Length :
- 16.05 mm
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 250 W
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 800 V
- Continuous Drain Current (ID) :
- 13A
- Tradename :
- HyperFET
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 52A
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 2
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 6.5A, 10V
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Rise Time :
- 36ns
- Product Type :
- MOSFET
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFT13
- Turn-Off Delay Time :
- 55 ns
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Series :
- HiPerFET™
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Width :
- 14 mm
- Power Dissipation :
- 250W
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Package :
- Tube
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- AVALANCHE RATED
- Datasheets
- IXFT13N80Q

N-Channel Tube 700m Ω @ 6.5A, 10V ±20V 3250pF @ 25V 90nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT13N80Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3250pF @ 25V.This device conducts a continuous drain current (ID) of 13A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 13 A.When the device is turned off, a turn-off delay time of 55 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 52A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFT13N80Q Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 52A.
a 800V drain to source voltage (Vdss)
IXFT13N80Q Applications
There are a lot of IXYS
IXFT13N80Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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