IXFT140N10P
- Mfr.Part #
- IXFT140N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 140A TO268
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Width :
- 14 mm
- Threshold Voltage :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-268AA
- Packaging :
- Tube
- Length :
- 16.05 mm
- RoHS :
- Details
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 600W (Tc)
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 175 C
- Product Type :
- MOSFET
- JESD-609 Code :
- e3
- Tradename :
- HiPerFET
- Height :
- 5.1 mm
- Supplier Device Package :
- TO-268
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Unknown
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 100 V
- Subcategory :
- MOSFETs
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 2
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 26 Weeks
- Number of Terminations :
- 2
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- 100V
- Pin Count :
- 4
- Turn-Off Delay Time :
- 85 ns
- Product Status :
- Active
- Type :
- PolarHV HiPerFET Power MOSFET
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- REACH SVHC :
- No SVHC
- Base Product Number :
- IXFT140
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 50ns
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2006
- Power Dissipation-Max :
- 600W Tc
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 70A, 10V
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Series :
- HiPerFET™, PolarHT™
- Transistor Polarity :
- N-Channel
- Mounting Style :
- SMD/SMT
- ECCN Code :
- EAR99
- Number of Channels :
- 1 Channel
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.011Ohm
- Continuous Drain Current (ID) :
- 140A
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Package :
- Box
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Fall Time (Typ) :
- 26 ns
- Power Dissipation :
- 600W
- Channel Mode :
- Enhancement
- Manufacturer :
- IXYS
- Datasheets
- IXFT140N10P

N-Channel Tube 11m Ω @ 70A, 10V ±20V 4700pF @ 25V 155nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT140N10P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 140A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 85 ns.Peak drain current for this device is 300 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFT140N10P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFT140N10P Applications
There are a lot of IXYS
IXFT140N10P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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