IXFT140N10P

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Mfr.Part #
IXFT140N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 140A TO268
Stock
16
In Stock :
16

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Width :
14 mm
Threshold Voltage :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-268AA
Packaging :
Tube
Length :
16.05 mm
RoHS :
Details
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Case Connection :
DRAIN
Power Dissipation (Max) :
600W (Tc)
Terminal Form :
Gull wing
FET Feature :
--
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 175 C
Product Type :
MOSFET
JESD-609 Code :
e3
Tradename :
HiPerFET
Height :
5.1 mm
Supplier Device Package :
TO-268
Vgs (Max) :
±20V
Brand :
IXYS
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Type :
1 N-Channel
Reach Compliance Code :
Unknown
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
100V
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
DS Breakdown Voltage-Min :
100 V
Subcategory :
MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
2
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Factory Lead Time :
26 Weeks
Number of Terminations :
2
Surface Mount :
yes
Drain to Source Breakdown Voltage :
100V
Pin Count :
4
Turn-Off Delay Time :
85 ns
Product Status :
Active
Type :
PolarHV HiPerFET Power MOSFET
Pbfree Code :
yes
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Configuration :
Single
Avalanche Energy Rating (Eas) :
2500 mJ
REACH SVHC :
No SVHC
Base Product Number :
IXFT140
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Rise Time :
50ns
Minimum Operating Temperature :
- 55 C
Published :
2006
Power Dissipation-Max :
600W Tc
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
11m Ω @ 70A, 10V
Product Category :
MOSFET
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Series :
HiPerFET™, PolarHT™
Transistor Polarity :
N-Channel
Mounting Style :
SMD/SMT
ECCN Code :
EAR99
Number of Channels :
1 Channel
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.011Ohm
Continuous Drain Current (ID) :
140A
Operating Temperature :
-55°C~175°C TJ
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
300 A
Package :
Box
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Fall Time (Typ) :
26 ns
Power Dissipation :
600W
Channel Mode :
Enhancement
Manufacturer :
IXYS
Datasheets
IXFT140N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT140N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, Type:PolarHV HiPerFET Power MOSFET, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, IXFT140N10P pinout, IXFT140N10P datasheet PDF, IXFT140N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT140N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT140N10P


N-Channel Tube 11m Ω @ 70A, 10V ±20V 4700pF @ 25V 155nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT140N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 140A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 85 ns.Peak drain current for this device is 300 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFT140N10P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300 A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFT140N10P Applications


There are a lot of IXYS
IXFT140N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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