IXFT12N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HyperFET

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

32 ns

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 150 C

Lead Free :

Lead Free

FET Feature :

--

Transistor Type :

1 N-Channel

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

48A

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

2

Terminal Form :

Gull wing

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSSO-G2

Product Status :

Active

Case Connection :

DRAIN

Channel Mode :

Enhancement

Number of Terminals :

2

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Series :

HiPerFET™

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Mounting Style :

SMD/SMT

Rise Time :

33ns

Mounting Type :

Surface Mount

Surface Mount :

yes

Base Product Number :

IXFT12

Configuration :

Single

Drain Current-Max (Abs) (ID) :

12 A

Vgs (Max) :

±20V

Power Dissipation (Max) :

300W (Tc)

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-268

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

5.1 mm

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

1.05 Ω

Package :

Tube

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

300 W

Published :

2004

Number of Elements :

1

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Length :

16.05 mm

Width :

14 mm

Turn-Off Delay Time :

62 ns

Brand :

IXYS

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

1000 V

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

1000V

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

1kV

Element Configuration :

Single

JEDEC-95 Code :

TO-268AA

Continuous Drain Current (ID) :

12A

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube