IXFT120N15P

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Mfr.Part #
IXFT120N15P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 150V 120A TO268
Stock
23,276
In Stock :
23,276

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Power Dissipation :
600W
Factory Lead Time :
8 Weeks
Transistor Application :
SWITCHING
Number of Terminations :
2
Brand :
IXYS
Subcategory :
MOSFETs
Avalanche Energy Rating (Eas) :
2000 mJ
Product Status :
Active
Drain to Source Breakdown Voltage :
150V
Qualification Status :
Not Qualified
Packaging :
Tube
JESD-30 Code :
R-PSSO-G2
JEDEC-95 Code :
TO-268AA
Supplier Device Package :
TO-268
Power Dissipation-Max :
600W Tc
Published :
2006
Length :
16.05 mm
Pbfree Code :
yes
Transistor Element Material :
SILICON
Tradename :
HiPerFET
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 25V
Surface Mount :
yes
Drain-source On Resistance-Max :
0.016 Ω
Number of Elements :
1
Configuration :
Single
Manufacturer :
IXYS
Width :
14 mm
Number of Channels :
1 Channel
Product Type :
MOSFET
Base Product Number :
IXFT120
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 175 C
Case Connection :
DRAIN
Fall Time (Typ) :
26 ns
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
DS Breakdown Voltage-Min :
150 V
Additional Feature :
AVALANCHE ENERGY RATED
Transistor Polarity :
N-Channel
Reach Compliance Code :
Unknown
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Turn-Off Delay Time :
85 ns
Height :
5.1 mm
Pin Count :
4
Mounting Type :
Surface Mount
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
150V
Terminal Finish :
Pure Tin (Sn)
Resistance :
16mOhm
Lead Free :
Lead Free
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
16m Ω @ 500mA, 10V
Rise Time :
42ns
RoHS Status :
ROHS3 Compliant
Number of Terminals :
2
Continuous Drain Current (ID) :
120A
FET Feature :
--
Mounting Style :
SMD/SMT
Power Dissipation (Max) :
600W (Tc)
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
260A
Channel Mode :
Enhancement
Series :
PolarHT™ HiPerFET™
FET Type :
N-Channel
Terminal Form :
Gull wing
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Package :
Box
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Datasheets
IXFT120N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT120N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT120N15P pinout, IXFT120N15P datasheet PDF, IXFT120N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT120N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT120N15P


N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT120N15P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [85 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 260A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFT120N15P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a 150V drain to source voltage (Vdss)


IXFT120N15P Applications


There are a lot of IXYS
IXFT120N15P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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