IXFT120N15P
- Mfr.Part #
- IXFT120N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 120A TO268
- Stock
- 23,276
- In Stock :
- 23,276
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Power Dissipation :
- 600W
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Brand :
- IXYS
- Subcategory :
- MOSFETs
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 150V
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-268AA
- Supplier Device Package :
- TO-268
- Power Dissipation-Max :
- 600W Tc
- Published :
- 2006
- Length :
- 16.05 mm
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 25V
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.016 Ω
- Number of Elements :
- 1
- Configuration :
- Single
- Manufacturer :
- IXYS
- Width :
- 14 mm
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Base Product Number :
- IXFT120
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 175 C
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 26 ns
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 150 V
- Additional Feature :
- AVALANCHE ENERGY RATED
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Unknown
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Turn-Off Delay Time :
- 85 ns
- Height :
- 5.1 mm
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 150V
- Terminal Finish :
- Pure Tin (Sn)
- Resistance :
- 16mOhm
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 500mA, 10V
- Rise Time :
- 42ns
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 2
- Continuous Drain Current (ID) :
- 120A
- FET Feature :
- --
- Mounting Style :
- SMD/SMT
- Power Dissipation (Max) :
- 600W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 260A
- Channel Mode :
- Enhancement
- Series :
- PolarHT™ HiPerFET™
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Package :
- Box
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Datasheets
- IXFT120N15P

N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT120N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [85 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 260A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFT120N15P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a 150V drain to source voltage (Vdss)
IXFT120N15P Applications
There are a lot of IXYS
IXFT120N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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