IXFT12N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Transistor Application :

SWITCHING

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

12 A

JESD-609 Code :

e3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

1kV

Series :

HiPerFET™

FET Type :

N-Channel

Turn-Off Delay Time :

40 ns

JEDEC-95 Code :

TO-268AA

Max Operating Temperature :

150 °C

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

1.05 Ω

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

300W (Tc)

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

1000V

Reach Compliance Code :

not_compliant

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Rise Time :

23ns

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Max Power Dissipation :

300 W

Manufacturer :

IXYS Corporation

Published :

2003

DS Breakdown Voltage-Min :

1000 V

RoHS :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

Packaging :

Tube

Fall Time (Typ) :

15 ns

Input Capacitance :

2.9 nF

Base Product Number :

IXFT12

Supplier Device Package :

TO-268

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Power Dissipation-Max :

300W Tc

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

48A

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Case Connection :

DRAIN

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

300W

Min Operating Temperature :

-55 °C

Terminal Position :

Single

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

300 W

Qualification Status :

Not Qualified

Drain to Source Resistance :

1.05 Ω

Transistor Element Material :

SILICON

Number of Terminals :

2

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Element Configuration :

Single

Drain-source On Resistance-Max :

1.05 Ω

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Pbfree Code :

yes

Continuous Drain Current (ID) :

12A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Obsolete

Surface Mount :

yes