IXFT10N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HyperFET

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

300 W

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

not_compliant

Pin Count :

4

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Resistance :

1.2 Ω

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

32 ns

Mounting Style :

SMD/SMT

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Surface Mount :

yes

JESD-609 Code :

e3

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

1000V

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Configuration :

Single

Pbfree Code :

yes

Element Configuration :

Single

Rise Time :

33ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

1.2 Ω

Drain Current-Max (Abs) (ID) :

10 A

JEDEC-95 Code :

TO-268AA

Mounting Type :

Surface Mount

Power Dissipation :

300W

Product Status :

Active

Number of Terminals :

2

DS Breakdown Voltage-Min :

1000 V

Continuous Drain Current (ID) :

10A

Transistor Element Material :

SILICON

Base Product Number :

IXFT10

Input Capacitance :

4 nF

Product Type :

MOSFET

Brand :

IXYS

Drain-source On Resistance-Max :

1.2 Ω

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Supplier Device Package :

TO-268

FET Feature :

--

Published :

2004

Turn-Off Delay Time :

62 ns

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 5A, 10V

JESD-30 Code :

R-PSSO-G2

Max Operating Temperature :

150 °C

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

40A

Case Connection :

DRAIN

RoHS :

Compliant

Packaging :

Tube

Manufacturer :

IXYS

Number of Terminations :

2

Drain to Source Breakdown Voltage :

1kV

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Length :

16.05 mm

Mount :

Surface Mount

Height :

5.1 mm

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Power Dissipation (Max) :

300W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

300 W

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Width :

14 mm