IXFT13N100

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Mfr.Part #
IXFT13N100
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12.5A TO268
Stock
39,837
In Stock :
39,837

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Resistance :
900mOhm
Lead Free :
Lead Free
Series :
HiPerFET™
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
12.5A Tc
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Drain Current-Max (Abs) (ID) :
12.5 A
Element Configuration :
Single
Pin Count :
4
Reach Compliance Code :
not_compliant
Number of Terminals :
2
Drain-source On Resistance-Max :
0.9 Ω
DS Breakdown Voltage-Min :
1000 V
JESD-609 Code :
e3
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Current Rating :
13A
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
300 W
Rise Time :
33ns
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Operating Temperature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXFT13
Qualification Status :
Not Qualified
Power Dissipation (Max) :
300W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Number of Terminations :
2
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Fall Time (Typ) :
32 ns
RoHS Status :
RoHS Compliant
Terminal Form :
Gull wing
Terminal Finish :
Matte Tin (Sn)
Manufacturer :
IXYS Corporation
Voltage - Rated DC :
1kV
Published :
2000
Drain to Source Breakdown Voltage :
1kV
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
1000V
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
900m Ω @ 500mA, 10V
Continuous Drain Current (ID) :
12.5A
Case Connection :
DRAIN
Power Dissipation :
300W
Turn-Off Delay Time :
62 ns
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Supplier Device Package :
TO-268
Min Operating Temperature :
-55°C
Product Status :
Obsolete
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
300W Tc
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-268
Pulsed Drain Current-Max (IDM) :
50A
Terminal Position :
Single
Datasheets
IXFT13N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:--, Number of Terminations:2, Mounting Type:Surface Mount, IXFT13N100 pinout, IXFT13N100 datasheet PDF, IXFT13N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT13N100


N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT13N100 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT13N100 Features


a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXFT13N100 Applications


There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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