IXFT13N100
- Mfr.Part #
- IXFT13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO268
- Stock
- 39,837
- In Stock :
- 39,837
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 13A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 300 W
- Power Dissipation :
- 300W
- Operating Temperature :
- --
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Operating Temperature :
- 150°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HiPerFET™
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Rise Time :
- 33ns
- Fall Time (Typ) :
- 32 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 12.5A
- JESD-30 Code :
- R-PSSO-G2
- Voltage - Rated DC :
- 1kV
- Terminal Position :
- Single
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 1000V
- Turn-Off Delay Time :
- 62 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- DS Breakdown Voltage-Min :
- 1000 V
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Obsolete
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFT13
- Drain Current-Max (Abs) (ID) :
- 12.5 A
- Drain-source On Resistance-Max :
- 0.9 Ω
- Supplier Device Package :
- TO-268
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Published :
- 2000
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- Resistance :
- 900mOhm
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 50A
- JEDEC-95 Code :
- TO-268
- Datasheets
- IXFT13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT13N100 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFT13N100 Applications
There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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