IXFT14N80P
- Mfr.Part #
- IXFT14N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO268
- Stock
- 45,997
- In Stock :
- 45,997
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Series :
- HiPerFET™, PolarHT™
- Power Dissipation-Max :
- 400W Tc
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 800V
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HiPerFET
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Product Status :
- Active
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 400W (Tc)
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Published :
- 2006
- Number of Elements :
- 1
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Product Category :
- MOSFET
- Vgs (Max) :
- ±30V
- Surface Mount :
- yes
- Product Type :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Continuous Drain Current (ID) :
- 14A
- JESD-609 Code :
- e3
- Number of Terminals :
- 2
- Manufacturer :
- IXYS
- Factory Lead Time :
- 24 Weeks
- Drain-source On Resistance-Max :
- 0.72Ohm
- Base Product Number :
- IXFT14
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Package :
- Tube
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-268
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- Subcategory :
- MOSFETs
- Mounting Style :
- SMD/SMT
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 400W
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-268AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Drain to Source Voltage (Vdss) :
- 800V
- Rds On (Max) @ Id, Vgs :
- 720m Ω @ 500mA, 10V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFT14N80P

N-Channel Tube 720m Ω @ 500mA, 10V ±30V 3900pF @ 25V 61nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT14N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT14N80P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 14A
a 800V drain to source voltage (Vdss)
IXFT14N80P Applications
There are a lot of IXYS
IXFT14N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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