IXFT14N100

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Mfr.Part #
IXFT14N100
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 14A TO268
Stock
32,628
In Stock :
32,628

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Matte Tin (Sn)
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Number of Terminations :
2
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Terminal Form :
Gull wing
Fall Time (Typ) :
30 ns
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
120 ns
Drain to Source Voltage (Vdss) :
1000V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Series :
HiPerFET™
JESD-609 Code :
e3
Surface Mount :
yes
Power Dissipation-Max :
360W Tc
Polarity/Channel Type :
N-Channel
Number of Terminals :
2
Power Dissipation (Max) :
360W (Tc)
Pbfree Code :
yes
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
1kV
Rds On (Max) @ Id, Vgs :
750m Ω @ 500mA, 10V
Power Dissipation-Max (Abs) :
360 W
Transistor Element Material :
SILICON
Supplier Device Package :
TO-268
Pulsed Drain Current-Max (IDM) :
56A
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Continuous Drain Current (ID) :
14A
Terminal Position :
Single
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
RoHS Compliant
Base Product Number :
IXFT14
Number of Elements :
1
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
14 A
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
360W
JESD-30 Code :
R-PSSO-G2
Pin Count :
4
Mounting Type :
Surface Mount
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
Package :
Tube
JEDEC-95 Code :
TO-268
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
not_compliant
DS Breakdown Voltage-Min :
1000 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Product Status :
Obsolete
Rise Time :
30ns
Mount :
Surface Mount
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2000
Drain-source On Resistance-Max :
0.75Ohm
Datasheets
IXFT14N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT14N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IXFT14N100 pinout, IXFT14N100 datasheet PDF, IXFT14N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT14N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT14N100


N-Channel Tube 750m Ω @ 500mA, 10V ±20V 4500pF @ 25V 220nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT14N100 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [14 A] according to its drain current.It is [120 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 56A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFT14N100 Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 56A.
a 1000V drain to source voltage (Vdss)


IXFT14N100 Applications


There are a lot of IXYS
IXFT14N100 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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