IXFT26N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 4mA

Brand :

IXYS

Manufacturer :

IXYS

FET Type :

N-Channel

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

104A

Maximum Operating Temperature :

+ 150 C

Length :

16.05 mm

Transistor Element Material :

SILICON

Base Product Number :

IXFT26

Transistor Application :

SWITCHING

Configuration :

Single

Mounting Style :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

300W Tc

Height :

5.1 mm

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Pin Count :

4

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-268

Turn-Off Delay Time :

65 ns

Fall Time (Typ) :

30 ns

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-268

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Rise Time :

33ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Feature :

--

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Number of Terminations :

2

Power Dissipation-Max (Abs) :

300 W

Power Dissipation (Max) :

300W (Tc)

Polarity/Channel Type :

N-Channel

Width :

14 mm

Published :

2002

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Drain Current-Max (Abs) (ID) :

26 A

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

500 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

500V

Qualification Status :

Not Qualified

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

200m Ω @ 13A, 10V

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

26A

JESD-609 Code :

e3

Package :

Tube

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.2Ohm

Element Configuration :

Single

Terminal Form :

Gull wing

Tradename :

HyperFET

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Terminals :

2

Product Status :

Obsolete

Series :

HiPerFET™

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Channel Mode :

Enhancement