IXFK98N50P3

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Mfr.Part #
IXFK98N50P3
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 98A TO264AA
Stock
13
In Stock :
13

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Minimum Operating Temperature :
-55 °C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
FET Type :
N-Channel
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
Number of Elements per Chip :
1
Turn On Delay Time :
35 ns
Power Dissipation :
1.3kW
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
98A Tc
Reach Compliance Code :
Unknown
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Width :
5.13mm
Rise Time :
8ns
Qualification :
-
Avalanche Energy Rating (Eas) :
2000 mJ
Supplier Device Package :
TO-264AA (IXFK)
Published :
2011
Brand :
IXYS
Case Connection :
DRAIN
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Length :
19.96mm
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS
Power Dissipation (Max) :
1300W (Tc)
Maximum Operating Temperature :
+150 °C
Height :
26.16mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Product Status :
Active
Turn-Off Delay Time :
65 ns
Drain to Source Voltage (Vdss) :
500V
Fall Time (Typ) :
6 ns
Drain-source On Resistance-Max :
0.05Ohm
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Series :
HiPerFET™, Polar3™
Gate to Source Voltage (Vgs) :
30V
Package Type :
TO-264
Vgs (Max) :
±30V
Element Configuration :
Single
Mounting Style :
Through Hole
Threshold Voltage :
5V
Power Dissipation-Max :
1300W Tc
Mounting Type :
Through Hole
Tradename :
HiPerFET
Drain to Source Breakdown Voltage :
500V
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Base Product Number :
IXFK98
Mount :
Through Hole
Continuous Drain Current (ID) :
98A
Continuous Drain Current Id :
98A
RoHS :
Details
Number of Pins :
3
Factory Lead Time :
30 Weeks
Pulsed Drain Current-Max (IDM) :
245A
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Channel Type :
N
Configuration :
Single
Package :
Tube
Transistor Element Material :
SILICON
MSL :
-
Number of Elements :
1
Vgs(th) (Max) @ Id :
5V @ 8mA
Number of Terminations :
3
Transistor Type :
1 N-Channel
Datasheets
IXFK98N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK98N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, IXFK98N50P3 pinout, IXFK98N50P3 datasheet PDF, IXFK98N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK98N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK98N50P3


N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V 500V TO-264-3, TO-264AA

IXFK98N50P3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13100pF @ 25V.This device conducts a continuous drain current (ID) of 98A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 245A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK98N50P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 98A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 245A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFK98N50P3 Applications


There are a lot of IXYS
IXFK98N50P3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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