IXFK98N50P3
- Mfr.Part #
- IXFK98N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 98A TO264AA
- Stock
- 13
- In Stock :
- 13
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Minimum Operating Temperature :
- -55 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements per Chip :
- 1
- Turn On Delay Time :
- 35 ns
- Power Dissipation :
- 1.3kW
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 98A Tc
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Width :
- 5.13mm
- Rise Time :
- 8ns
- Qualification :
- -
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Supplier Device Package :
- TO-264AA (IXFK)
- Published :
- 2011
- Brand :
- IXYS
- Case Connection :
- DRAIN
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Length :
- 19.96mm
- Package / Case :
- TO-264-3, TO-264AA
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 1300W (Tc)
- Maximum Operating Temperature :
- +150 °C
- Height :
- 26.16mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 500mA, 10V
- Product Status :
- Active
- Turn-Off Delay Time :
- 65 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Fall Time (Typ) :
- 6 ns
- Drain-source On Resistance-Max :
- 0.05Ohm
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Series :
- HiPerFET™, Polar3™
- Gate to Source Voltage (Vgs) :
- 30V
- Package Type :
- TO-264
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Mounting Style :
- Through Hole
- Threshold Voltage :
- 5V
- Power Dissipation-Max :
- 1300W Tc
- Mounting Type :
- Through Hole
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 500V
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFK98
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 98A
- Continuous Drain Current Id :
- 98A
- RoHS :
- Details
- Number of Pins :
- 3
- Factory Lead Time :
- 30 Weeks
- Pulsed Drain Current-Max (IDM) :
- 245A
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Channel Type :
- N
- Configuration :
- Single
- Package :
- Tube
- Transistor Element Material :
- SILICON
- MSL :
- -
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- Datasheets
- IXFK98N50P3

N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V 500V TO-264-3, TO-264AA
IXFK98N50P3 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13100pF @ 25V.This device conducts a continuous drain current (ID) of 98A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 245A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFK98N50P3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 98A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 245A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFK98N50P3 Applications
There are a lot of IXYS
IXFK98N50P3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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