IXFK94N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

94 A

Continuous Drain Current (ID) :

94A

Subcategory :

MOSFETs

Input Capacitance :

13.7nF

Case Connection :

DRAIN

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

3500 mJ

Drain to Source Resistance :

55mOhm

Series :

HiPerFET™, PolarHV™

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

500V

Polarity/Channel Type :

N-Channel

Published :

2010

Radiation Hardening :

No

Max Power Dissipation :

1.3 kW

Power Dissipation (Max) :

1300W (Tc)

FET Feature :

--

Configuration :

Single

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

94A Tc

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-264AA (IXFK)

Pulsed Drain Current-Max (IDM) :

240 A

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

JESD-609 Code :

e1

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

500 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Number of Terminals :

3

Qualification Status :

Not Qualified

RoHS :

Details

Lead Free :

Lead Free

Packaging :

Tube

Product Type :

MOSFET

Base Product Number :

IXFK94

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 8mA

Mount :

Through Hole

Surface Mount :

No

Factory Lead Time :

30 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

55mOhm @ 500mA, 10V

Power Dissipation-Max :

1300W Tc

Rds On Max :

55 mΩ

Element Configuration :

Single

Brand :

IXYS

Transistor Element Material :

SILICON

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max (Abs) :

1300 W

Power Dissipation :

1.3kW

Product Status :

Active

Drain-source On Resistance-Max :

0.055 Ω

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Max Operating Temperature :

150°C

Type :

PolarP2 HiPerFET

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-264AA

Reach Compliance Code :

Compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS