IXFK90N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

19.96 mm

RoHS :

Details

Fall Time (Typ) :

40 ns

Power Dissipation-Max (Abs) :

560 W

FET Type :

N-Channel

Pbfree Code :

yes

Number of Elements :

1

Base Product Number :

IXFK90

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 8mA

Published :

2002

Pulsed Drain Current-Max (IDM) :

360 A

Drain-source On Resistance-Max :

0.033 Ω

Product Status :

Not For New Designs

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

3000 mJ

JEDEC-95 Code :

TO-264

DS Breakdown Voltage-Min :

300 V

FET Feature :

--

Series :

HiPerFET™

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

560W Tc

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

90 A

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Mount :

Through Hole

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Turn-Off Delay Time :

100 ns

Package :

Tube

Product Type :

MOSFET

Packaging :

Tube

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Brand :

IXYS

Width :

5.13 mm

Mounting Style :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Power Dissipation (Max) :

560W (Tc)

Reach Compliance Code :

Compliant

Number of Terminations :

3

Surface Mount :

No

Rise Time :

55ns

Package / Case :

TO-264-3, TO-264AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Terminal Position :

Single

Qualification Status :

Not Qualified

Height :

26.16 mm

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

300V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Power Dissipation :

560W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-264AA (IXFK)

Tradename :

HyperFET

Configuration :

Single

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Continuous Drain Current (ID) :

90A

Pin Count :

3

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

300V

Number of Terminals :

3