IXFK90N30

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Mfr.Part #
IXFK90N30
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 90A TO-264
Stock
18,716
In Stock :
18,716

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
RoHS :
Details
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.033 Ω
Surface Mount :
No
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
300V
Pin Count :
3
Rise Time :
55ns
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Drain Current-Max (Abs) (ID) :
90 A
Rds On (Max) @ Id, Vgs :
33m Ω @ 45A, 10V
Transistor Application :
SWITCHING
Published :
2002
Product Category :
MOSFET
Product Status :
Not For New Designs
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
360 A
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Turn-Off Delay Time :
100 ns
Drain to Source Breakdown Voltage :
300V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
40 ns
Base Product Number :
IXFK90
Brand :
IXYS
Power Dissipation-Max (Abs) :
560 W
Mounting Type :
Through Hole
Terminal Position :
Single
Power Dissipation (Max) :
560W (Tc)
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Element Configuration :
Single
Tradename :
HyperFET
Width :
5.13 mm
Vgs(th) (Max) @ Id :
4V @ 8mA
Transistor Type :
1 N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
19.96 mm
Height :
26.16 mm
DS Breakdown Voltage-Min :
300 V
Continuous Drain Current (ID) :
90A
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Pbfree Code :
yes
JEDEC-95 Code :
TO-264
Series :
HiPerFET™
Power Dissipation :
560W
Avalanche Energy Rating (Eas) :
3000 mJ
Reach Compliance Code :
Compliant
Power Dissipation-Max :
560W Tc
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
Manufacturer :
IXYS
Configuration :
Single
Package / Case :
TO-264-3, TO-264AA
Packaging :
Tube
Supplier Device Package :
TO-264AA (IXFK)
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Number of Terminals :
3
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Mounting Style :
Through Hole
RoHS Status :
RoHS Compliant
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
FET Feature :
--
Number of Pins :
3
Package :
Tube
Datasheets
IXFK90N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFK90N30 pinout, IXFK90N30 datasheet PDF, IXFK90N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK90N30


N-Channel Tube 33m Ω @ 45A, 10V ±20V 10000pF @ 25V 360nC @ 10V 300V TO-264-3, TO-264AA

IXFK90N30 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 10000pF @ 25V.This device has a continuous drain current (ID) of [90A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 90 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 360 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFK90N30 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 360 A.
a 300V drain to source voltage (Vdss)


IXFK90N30 Applications


There are a lot of IXYS
IXFK90N30 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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