IXFK90N30
- Mfr.Part #
- IXFK90N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 90A TO-264
- Stock
- 18,716
- In Stock :
- 18,716
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.033 Ω
- Surface Mount :
- No
- Product Type :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 300V
- Pin Count :
- 3
- Rise Time :
- 55ns
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Drain Current-Max (Abs) (ID) :
- 90 A
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 45A, 10V
- Transistor Application :
- SWITCHING
- Published :
- 2002
- Product Category :
- MOSFET
- Product Status :
- Not For New Designs
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 360 A
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 40 ns
- Base Product Number :
- IXFK90
- Brand :
- IXYS
- Power Dissipation-Max (Abs) :
- 560 W
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 560W (Tc)
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Tradename :
- HyperFET
- Width :
- 5.13 mm
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Transistor Type :
- 1 N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 19.96 mm
- Height :
- 26.16 mm
- DS Breakdown Voltage-Min :
- 300 V
- Continuous Drain Current (ID) :
- 90A
- Polarity/Channel Type :
- N-Channel
- Channel Mode :
- Enhancement
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-264
- Series :
- HiPerFET™
- Power Dissipation :
- 560W
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 560W Tc
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Manufacturer :
- IXYS
- Configuration :
- Single
- Package / Case :
- TO-264-3, TO-264AA
- Packaging :
- Tube
- Supplier Device Package :
- TO-264AA (IXFK)
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- FET Feature :
- --
- Number of Pins :
- 3
- Package :
- Tube
- Datasheets
- IXFK90N30

N-Channel Tube 33m Ω @ 45A, 10V ±20V 10000pF @ 25V 360nC @ 10V 300V TO-264-3, TO-264AA
IXFK90N30 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 10000pF @ 25V.This device has a continuous drain current (ID) of [90A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 90 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 360 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFK90N30 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 360 A.
a 300V drain to source voltage (Vdss)
IXFK90N30 Applications
There are a lot of IXYS
IXFK90N30 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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