IXFK90N20Q

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Mfr.Part #
IXFK90N20Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 90A TO264AA
Stock
2,417
In Stock :
2,417

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Drain-source On Resistance-Max :
0.022 Ω
Fall Time (Typ) :
12 ns
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-264AA (IXFK)
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Manufacturer :
IXYS
Product Category :
MOSFET
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Length :
19.96 mm
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Pulsed Drain Current-Max (IDM) :
360 A
ECCN Code :
EAR99
Number of Terminals :
3
FET Feature :
--
Height :
26.16 mm
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Pin Count :
3
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Published :
2002
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4V @ 4mA
Configuration :
Single
Package :
Tube
Terminal Position :
Single
Transistor Application :
SWITCHING
Power Dissipation-Max :
500W Tc
JESD-30 Code :
R-PSFM-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Power Dissipation-Max (Abs) :
500 W
Drain to Source Voltage (Vdss) :
200V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
500W
Brand :
IXYS
Number of Elements :
1
Factory Lead Time :
8 Weeks
Drain Current-Max (Abs) (ID) :
90 A
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Width :
5.13 mm
Continuous Drain Current (ID) :
90A
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
22m Ω @ 45A, 10V
Rise Time :
31ns
Resistance :
22mOhm
Element Configuration :
Single
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-264-3, TO-264AA
Voltage - Rated DC :
200V
Avalanche Energy Rating (Eas) :
2500 mJ
Turn-Off Delay Time :
82 ns
Base Product Number :
IXFK90
Surface Mount :
No
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
Not Applicable
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current Rating :
90A
Drain to Source Breakdown Voltage :
200V
Minimum Operating Temperature :
- 55 C
JEDEC-95 Code :
TO-264AA
DS Breakdown Voltage-Min :
200 V
Mount :
Through Hole
Packaging :
Tube
Tradename :
HiPerFET
Recovery Time :
200 ns
FET Type :
N-Channel
Product Status :
Not For New Designs
Series :
HiPerFET™
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
Through Hole
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N20Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, IXFK90N20Q pinout, IXFK90N20Q datasheet PDF, IXFK90N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK90N20Q


N-Channel Tube 22m Ω @ 45A, 10V ±20V 6800pF @ 25V 190nC @ 10V 200V TO-264-3, TO-264AA

IXFK90N20Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [90 A] according to its drain current.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 360 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK90N20Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 360 A.
a 200V drain to source voltage (Vdss)


IXFK90N20Q Applications


There are a lot of IXYS
IXFK90N20Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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