IXFK90N20Q

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Mfr.Part #
IXFK90N20Q
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 90A TO264AA
Stock
2,417
In Stock :
2,417

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-264AA (IXFK)
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Fall Time (Typ) :
12 ns
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.022 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
500W (Tc)
Voltage - Rated DC :
200V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Width :
5.13 mm
Series :
HiPerFET™
Turn-Off Delay Time :
82 ns
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Drain to Source Breakdown Voltage :
200V
Product Category :
MOSFET
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
90A
Vgs(th) (Max) @ Id :
4V @ 4mA
Number of Terminations :
3
FET Feature :
--
JESD-30 Code :
R-PSFM-T3
RoHS :
Details
FET Type :
N-Channel
Power Dissipation-Max :
500W Tc
Brand :
IXYS
Product Status :
Not For New Designs
Tradename :
HiPerFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Recovery Time :
200 ns
Rds On (Max) @ Id, Vgs :
22m Ω @ 45A, 10V
ECCN Code :
EAR99
Mounting Style :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Published :
2002
Power Dissipation-Max (Abs) :
500 W
Mount :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Resistance :
22mOhm
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
8 Weeks
Minimum Operating Temperature :
- 55 C
Configuration :
Single
Drain to Source Voltage (Vdss) :
200V
Vgs (Max) :
±20V
Packaging :
Tube
Pin Count :
3
Length :
19.96 mm
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Avalanche Energy Rating (Eas) :
2500 mJ
Terminal Position :
Single
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Pulsed Drain Current-Max (IDM) :
360 A
Drain Current-Max (Abs) (ID) :
90 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-264AA
Number of Pins :
3
Package :
Tube
Number of Channels :
1 Channel
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
Not Applicable
Base Product Number :
IXFK90
Channel Mode :
Enhancement
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Current Rating :
90A
DS Breakdown Voltage-Min :
200 V
Element Configuration :
Single
Height :
26.16 mm
Transistor Application :
SWITCHING
Power Dissipation :
500W
Rise Time :
31ns
Datasheets
IXFK90N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N20Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Channels:1 Channel, IXFK90N20Q pinout, IXFK90N20Q datasheet PDF, IXFK90N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK90N20Q


N-Channel Tube 22m Ω @ 45A, 10V ±20V 6800pF @ 25V 190nC @ 10V 200V TO-264-3, TO-264AA

IXFK90N20Q Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.A device can conduct a maximum continuous current of [90 A] according to its drain current.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 360 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFK90N20Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 360 A.
a 200V drain to source voltage (Vdss)


IXFK90N20Q Applications


There are a lot of IXYS
IXFK90N20Q applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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