IXFK90N20
- Mfr.Part #
- IXFK90N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 90A TO264AA
- Stock
- 2,081
- In Stock :
- 2,081
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 4 V
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-264AA
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Rise Time :
- 80ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-264-3, TO-264AA
- Factory Lead Time :
- 8 Weeks
- Manufacturer :
- IXYS Corporation
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 45A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Power Dissipation-Max :
- 500W Tc
- Power Dissipation Ambient-Max :
- 500 W
- Series :
- HiPerFET™
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 200 V
- Power Dissipation (Max) :
- 500W (Tc)
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- Resistance :
- 20mOhm
- Package :
- Tube
- Dual Supply Voltage :
- 200V
- Mount :
- Through Hole
- Fall Time (Typ) :
- 30 ns
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 200V
- Drain-source On Resistance-Max :
- 0.023 Ω
- Threshold Voltage :
- 4V
- Drain Current-Max (Abs) (ID) :
- 90 A
- Voltage - Rated DC :
- 200V
- Drain to Source Breakdown Voltage :
- 200V
- REACH SVHC :
- No SVHC
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Surface Mount :
- No
- Product Status :
- Not For New Designs
- Packaging :
- Tube
- Power Dissipation :
- 500W
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Continuous Drain Current (ID) :
- 90A
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 500 W
- Pulsed Drain Current-Max (IDM) :
- 360 A
- Number of Terminations :
- 3
- Base Product Number :
- IXFK90
- Current Rating :
- 90A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFK90N20

N-Channel Tube 23m Ω @ 45A, 10V ±20V 9000pF @ 25V 380nC @ 10V 200V TO-264-3, TO-264AA
IXFK90N20 Overview
A device's maximum input capacitance is 9000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 90 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 360 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK90N20 Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 360 A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IXFK90N20 Applications
There are a lot of IXYS
IXFK90N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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