IXFK90N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS Corporation

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

360 A

Turn-Off Delay Time :

75 ns

Case Connection :

DRAIN

Package / Case :

TO-264-3, TO-264AA

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Nominal Vgs :

4 V

Power Dissipation Ambient-Max :

500 W

Factory Lead Time :

8 Weeks

FET Feature :

--

Series :

HiPerFET™

Vgs(th) (Max) @ Id :

4V @ 8mA

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFK90

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Lead Free :

Lead Free

Threshold Voltage :

4V

Supplier Device Package :

TO-264AA (IXFK)

Gate to Source Voltage (Vgs) :

20V

Product Status :

Not For New Designs

Power Dissipation-Max :

500W Tc

Published :

2000

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Drain to Source Voltage (Vdss) :

200V

Dual Supply Voltage :

200V

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Rise Time :

80ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

FET Type :

N-Channel

Package :

Tube

Voltage - Rated DC :

200V

DS Breakdown Voltage-Min :

200 V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

20mOhm

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

23m Ω @ 45A, 10V

Current Rating :

90A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Drain Current-Max (Abs) (ID) :

90 A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation (Max) :

500W (Tc)

Continuous Drain Current (ID) :

90A

Power Dissipation-Max (Abs) :

500 W

JEDEC-95 Code :

TO-264AA

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Power Dissipation :

500W

Fall Time (Typ) :

30 ns

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.023 Ω

Number of Pins :

3