IXFK90N20

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Mfr.Part #
IXFK90N20
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 90A TO264AA
Stock
2,081
In Stock :
2,081

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Nominal Vgs :
4 V
Element Configuration :
Single
JEDEC-95 Code :
TO-264AA
Lead Free :
Lead Free
FET Type :
N-Channel
Case Connection :
DRAIN
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Terminal Position :
Single
Rise Time :
80ns
Supplier Device Package :
TO-264AA (IXFK)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-264-3, TO-264AA
Factory Lead Time :
8 Weeks
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
23m Ω @ 45A, 10V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Power Dissipation-Max :
500W Tc
Power Dissipation Ambient-Max :
500 W
Series :
HiPerFET™
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Number of Pins :
3
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Number of Elements :
1
DS Breakdown Voltage-Min :
200 V
Power Dissipation (Max) :
500W (Tc)
Terminal Form :
THROUGH-HOLE
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2000
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Package Shape :
RECTANGULAR
Number of Terminals :
3
Resistance :
20mOhm
Package :
Tube
Dual Supply Voltage :
200V
Mount :
Through Hole
Fall Time (Typ) :
30 ns
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
200V
Drain-source On Resistance-Max :
0.023 Ω
Threshold Voltage :
4V
Drain Current-Max (Abs) (ID) :
90 A
Voltage - Rated DC :
200V
Drain to Source Breakdown Voltage :
200V
REACH SVHC :
No SVHC
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 8mA
Surface Mount :
No
Product Status :
Not For New Designs
Packaging :
Tube
Power Dissipation :
500W
Pbfree Code :
yes
Turn-Off Delay Time :
75 ns
Continuous Drain Current (ID) :
90A
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
500 W
Pulsed Drain Current-Max (IDM) :
360 A
Number of Terminations :
3
Base Product Number :
IXFK90
Current Rating :
90A
Operating Temperature :
-55°C~150°C TJ
Datasheets
IXFK90N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N20 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFK90N20 pinout, IXFK90N20 datasheet PDF, IXFK90N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK90N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK90N20


N-Channel Tube 23m Ω @ 45A, 10V ±20V 9000pF @ 25V 380nC @ 10V 200V TO-264-3, TO-264AA

IXFK90N20 Overview


A device's maximum input capacitance is 9000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its drain current is 90 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 360 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK90N20 Features


a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 360 A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IXFK90N20 Applications


There are a lot of IXYS
IXFK90N20 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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